KIA Semicon Tech KNP9120A 40A 200V N Channel MOSFET Suitable for DC DC Converters and Motor Controls
Key Attributes
Model Number:
KNP9120A
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-
RDS(on):
65mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
150pF
Number:
-
Input Capacitance(Ciss):
3.7nF
Output Capacitance(Coss):
400pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
120nC@10V
Mfr. Part #:
KNP9120A
Package:
TO-220
Product Description
Product Overview
This is a 40A, 200V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model 9120A. It features proprietary new planar technology, a low RDS(ON) of 50m (typ.) at VGS=10V, low gate charge for minimized switching loss, and a fast recovery body diode. It is suitable for applications such as DC-DC converters, DC-AC inverters for UPS, SMPS, and motor controls.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KNP9120A
- Package: TO-220
- Origin: KIA
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Off characteristics (TJ=25C,unless otherwise specified) | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 200 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=200V ,VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current | IDSS | VDS=160V , VGS=0V TJ=125 C | - | - | 100 | A |
| Gate-to-source Leakage Current | IGSS | VGS=+20V, VDS=0V | - | - | +100 | nA |
| Gate-to-source Leakage Current | IGSS | VGS=-20V, VDS=0V | - | - | -100 | nA |
| On characteristics (TJ=25C,unless otherwise specified) | ||||||
| Gate threshold voltage | VGS(TH) | VDS=VGS, ID=250A | 2.0 | - | 4.0 | V |
| Static drain-source on-resistance | RDS(ON) | VgS=10V,ID=20A | - | 50 | 65 | m |
| Forward Transconductance | GFS | VDS=15V,ID=20A | - | 65 | - | S |
| Dynamic characteristics (Essentially independent of operating temperature) | ||||||
| Input capacitance | CISS | VDS=25V,VGS=0V, f=1.0 MHz | - | 2800 | 3700 | pF |
| Output capacitance | COSS | - | 305 | 400 | pF | |
| Reverse transfer capacitance | CRSS | - | 110 | 150 | pF | |
| Turn-on delay time | tD(ON) | VDD=100V,ID=20A, RG=3.9,VGS=10V | - | 20 | - | ns |
| Rise time | tR | - | 30 | - | ns | |
| Turn-off delay time | tD(OFF) | - | 65 | - | ns | |
| Fall time | tF | - | 25 | - | ns | |
| Switching characteristics (Essentially independent of operating temperature) | ||||||
| Total gate charge | QG | VDD=100V, ID=20A VGS=0 to10V | - | 97 | 120 | nC |
| Gate-source charge | QGS | - | 14 | - | nC | |
| Gate-drain charge | QGD | - | 39 | - | nC | |
| Switching characteristics (TJ=25C,unless otherwise specified) | ||||||
| Drain-source diode forward voltage | VSD | VGS=0V, IS=40A | - | - | 1.5 | V |
| Continuous drain-source current | ISD | Integral PN-diode in MOSFET | - | - | 40 | A |
| Pulsed drain-source current | ISM | - | - | 160 | A | |
| Reverse recovery time | trr | VGS=0V,IF=20A diF/dt=100A/s | - | 280 | - | ns |
| Reverse recovery charge | Qrr | - | 420 | - | C | |
2410010000_KIA-Semicon-Tech-KNP9120A_C135565.pdf
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