120A 40V N Channel Power MOSFET KIA Semicon Tech KNB3004A with Low Gate Charge and TO 263 Package
Key Attributes
Model Number:
KNB3004A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
120A
RDS(on):
3.8mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
230pF
Number:
1 N-channel
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
3.35nF
Pd - Power Dissipation:
136W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
KNB3004A
Package:
TO-263
Product Description
Product Overview
120A, 40V N-Channel Power MOSFET featuring Advanced Trench technology, super low gate charge, and excellent CdV/dt effect decline. This device is 100% Vds and UIS tested, offering a typical RDS(ON) of 3.8m @ VGS=10V. Available in Green Device option.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KNB3004A
- Package: TO-263
- Origin: KMOS Semiconductor
- Certifications: Green Device Available
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | - | - | V |
| Gate-Source Voltage | VGS | VDS=0V | - | - | ±20 | V |
| Continuous Drain Current | ID | TC=25°C | - | - | 120 | A |
| Continuous Drain Current | ID | TC=100°C | - | - | 75 | A |
| Pulsed Drain Current | IDM | @ Current-Pulsed | - | - | 480 | A |
| Total Power Dissipation | PD | TC=25°C | - | - | 136 | W |
| Avalanche Energy | EAS | - | 324 | - | mJ | |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 150 | °C | |
| Thermal Resistance, Junction-to-Case | RθJC | - | 1.1 | - | °C/W | |
| Drain-Source Leakage Current | IDSS | VDS=40V,VGS=0V | - | - | 1 | µA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=-250uA | 1.0 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=30A | - | 3.8 | 4.6 | mΩ |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=20A | - | 5.0 | 6.5 | mΩ |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1.0MHz | - | 3350 | - | pF |
| Output Capacitance | Coss | VDS=20V , VGS=0V , f=1.0MHz | - | 300 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=20V , VGS=0V , f=1.0MHz | - | 230 | - | pF |
| Turn-On Delay Time | td(on) | VDS=20V,VGS=10V, RG=3.0Ω,ID=20A | - | 10 | - | ns |
| Rise Time | tr | VDS=20V,VGS=10V, RG=3.0Ω,ID=20A | - | 28 | - | ns |
| Turn-Off Delay Time | td(off) | VDS=20V,VGS=10V, RG=3.0Ω,ID=20A | - | 58 | - | ns |
| Fall Time | tf | VDS=20V,VGS=10V, RG=3.0Ω,ID=20A | - | 18 | - | ns |
| Total Gate Charge | Qg | VDS=20V, VGS=10V , ID=20A | - | 60 | - | nC |
| Gate-Source Charge | Qgs | VDS=20V, VGS=10V , ID=20A | - | 8.1 | - | nC |
| Gate-Drain Charge | Qgd | VDS=20V, VGS=10V , ID=20A | - | 11 | - | nC |
| Source-Drain Current (Body Diode) | ISD | - | - | 120 | A | |
| Diode Forward Voltage | VSD | VGS=0V, ISD=20A,TJ=25°C | - | - | 1.2 | V |
| Reverse Recovery Time | trr | TJ=25°C, IF=20A, di/dt=100A/μs | - | 15 | - | nS |
| Reverse Recovery Charge | Qrr | TJ=25°C, IF=20A, di/dt=100A/μs | - | 11 | - | nC |
2507111630_KIA-Semicon-Tech-KNB3004A_C49328621.pdf
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