N channel MOSFET KIA Semicon Tech KNB2912A with low gate charge and high avalanche current stability
Key Attributes
Model Number:
KNB2912A
Product Custom Attributes
Drain To Source Voltage:
120V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
530pF
Number:
-
Output Capacitance(Coss):
788pF
Input Capacitance(Ciss):
8.12nF
Gate Charge(Qg):
189nC@10V
Mfr. Part #:
KNB2912A
Package:
TO-263
Product Description
Product Overview
The KNX2912A is a N-CHANNEL MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design contributes to lower Rdson, and it is fully characterized for avalanche voltage and current with good stability and uniformity.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Part Number | Package | VDS (V) | ID (A) | RDS(ON) (typ.) (m) | EAS (mJ) | RJC (C/W) |
| KNB2912A | TO-263 | 120 | 130 | 6.0 @ VGS=10V | 1155 | 0.44 |
| KNP2912A | TO-220 | 120 | 130 | 6.0 @ VGS=10V | 1155 | 0.44 |
2409302301_KIA-Semicon-Tech-KNB2912A_C2896656.pdf
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