N channel MOSFET KIA Semicon Tech KNP4540A designed for SMPS standby power and charger applications
Key Attributes
Model Number:
KNP4540A
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
800mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
7.5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
490pF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
14nC@200V
Mfr. Part #:
KNP4540A
Package:
TO-220
Product Description
Product Overview
The KIA SEMICONDUCTORS KNX4540A is a 6A, 400V N-CHANNEL MOSFET designed for various power applications. It features a low gate charge for minimized switching loss and a fast recovery body diode. Its key advantages include a typical on-resistance of 0.8 at VGS=10V. This MOSFET is suitable for use in adaptors, chargers, and SMPS standby power systems.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Certifications: RoHS Compliant
Technical Specifications
| Part Number | Package | Brand | VDSS (V) | ID (A) | RDS(ON) Typ. () | PD (W) | RJC (C/W) | RJA (C/W) |
| KNP4540A | TO-220 | KIA | 400 | 6.0 | 0.8 | 75 | 1.67 | 62 |
| KNF4540A | TO-220F | KIA | 400 | 6.0 | 0.8 | 25 | 5.0 | 100 |
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF Characteristics (TJ=25C, unless otherwise specified) | ||||||
| BVDSS | Drain-to-Source Breakdown Voltage | VGS=0V, ID=250uA | 400 | -- | -- | V |
| IDSS | Drain-to-Source Leakage Current | VDS=400V, VGS=0V | -- | -- | 1 | uA |
| IDSS | Drain-to-Source Leakage Current | VDS=320V,VGS=0V, TJ =125C | -- | -- | 100 | uA |
| IGSS | Gate-to-Source Leakage Current | VGS=+20V,VDS=0V | -- | -- | +1.0 | uA |
| IGSS | Gate-to-Source Leakage Current | VGS=-20V, VDS=0V | -- | -- | -1.0 | uA |
| ON Characteristics (TJ=25C, unless otherwise specified) | ||||||
| RDS(ON) | Static Drain-to-Source On-Resistance | VGS=10V, ID=3.0A | -- | 0.8 | 1.0 | |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250uA | 2.0 | -- | 4.0 | V |
| gFS | Forward Transconductance | VDS=15V,ID=3A | -- | 5.0 | -- | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, f=1.0MHZ | -- | 490 | -- | pF |
| Crss | Reverse Transfer Capacitance | -- | -- | 7.5 | -- | pF |
| Coss | Output Capacitance | -- | -- | 63 | -- | pF |
| Qg | Total Gate Charge | VDD=200V, ID=6A, VGS=0 to 10V | -- | 14 | -- | nC |
| Qgs | Gate-to-Source Charge | -- | -- | 3.1 | -- | nC |
| Qgd | Gate-to-Drain (Miller) Charge | -- | -- | 6.4 | -- | nC |
| Resistive Switching Characteristics | ||||||
| td(ON) | Turn-on Delay Time | VDD=200V, ID=6A, VGS= 10V RG=9.1 | -- | 8.1 | -- | nS |
| trise | Rise Time | -- | -- | 10.2 | -- | nS |
| td(OFF) | Turn-Off Delay Time | -- | -- | 26 | -- | nS |
| tfall | Fall Time | -- | -- | 14 | -- | nS |
| Source-Drain Body Diode Characteristics | ||||||
| ISD | Continuous Source Current | Integral PN-diode in MOSFET | -- | -- | 6.0 | A |
| ISM | Pulsed Source Current | -- | -- | -- | 24 | A |
| VSD | Diode Forward Voltage | IS=30A, VGS=0V | -- | -- | 1.5 | V |
| trr | Reverse recovery time | VGS=0V ,IF=6A, diF/dt=100A/s | -- | 305 | -- | ns |
| Qrr | Reverse recovery charge | -- | -- | 840 | -- | uC |
2410010001_KIA-Semicon-Tech-KNP4540A_C455994.pdf
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