Power management MOSFET KIA Semicon Tech KNH9120A with enhanced switching performance and reliability
Key Attributes
Model Number:
KNH9120A
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-
RDS(on):
65mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
110pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.8nF
Output Capacitance(Coss):
305pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
97nC@10V
Mfr. Part #:
KNH9120A
Package:
TO-3P
Product Description
Product Overview
The KIA Semiconductors KNX9120A is a 40A, 200V N-Channel MOSFET featuring proprietary new planar technology. It offers a low RDS(ON) of 50m (typ.) at VGS=10V, minimized switching loss due to low gate charge, and a fast recovery body diode. This MOSFET is ideal for DC-DC converters, DC-AC inverters for UPS, SMPS, and motor controls.
Product Attributes
- Brand: KIA Semiconductors
- Part Number: KNX9120A
Technical Specifications
| Parameter | Symbol | Conditions | TO-220 | TO-3P | Units |
| Absolute Maximum Ratings | |||||
| Drain-source voltage | VDSS | 200 | 200 | V | |
| Gate-source voltage | VGSS | 20 | 20 | V | |
| Continuous Drain Current | ID | TC=25C | 40 | 40 | A |
| Pulsed Drain Current | IDM | VGS=10V | Figure3 | Figure3 | A |
| Avalanche energy Single pulse | EAS | 1200 | 1200 | mJ | |
| Peak Diode Recovery dv/dt | dv/dt | ISD= 20A di/dt < 100 A/s, VDD < BVDSS, TJ=+150C | 5.0 | 5.0 | V/ns |
| Power Dissipation | PD | 125 | 150 | W | |
| Derating Factor above 25 C | 1.0 | 1.2 | W/C | ||
| Maximum Temperature for Soldering Leads | TL | at 0.063in(1.6mm) form Case for 10 Seconds | 300 | 260 | C |
| Storage temperature | TSTG | -55~+150 | -55~+150 | C | |
| Thermal Characteristics | |||||
| Thermal Resistance, Junction-to-Case | RJC | 1.0 | 0.83 | C/W | |
| Thermal Resistance, Junction-to-Ambient | RJA | 62 | C/W | ||
| Electrical Characteristics | |||||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 200 | 200 | V |
| Drain-to-Source Leakage Current | IDSS | VDS=200V ,VGS=0V | - | - | 1 A |
| Drain-to-Source Leakage Current | IDSS | VDS=160V , VGS=0V, TJ=125 C | - | - | 100 A |
| Gate-to-source Leakage Current | IGSS | VGS=+20V, VDS=0V | - | - | +100 nA |
| Gate-to-source Leakage Current | IGSS | VGS=-20V, VDS=0V | - | - | -100 nA |
| Gate threshold voltage | VGS(TH) | VDS=VGS, ID=250A | 2.0 | 4.0 | V |
| Static drain-source on-resistance | RDS(ON) | VgS=10V,ID=20A | - | 50 | 65 m |
| Forward Transconductance | GFS | VDS=15V,ID=20A | - | 65 | S |
| Dynamic Characteristics | |||||
| Input capacitance | CISS | VDS=25V,VGS=0V, f=1.0 MHz | - | 2800 | pF |
| Output capacitance | COSS | - | 305 | pF | |
| Reverse transfer capacitance | CRSS | - | 110 | pF | |
| Turn-on delay time | tD(ON) | VDD=100V,ID=20A, RG=3.9,VGS=10V | - | 20 | ns |
| Rise time | tR | - | 30 | ns | |
| Turn-off delay time | tD(OFF) | - | 65 | ns | |
| Fall time | tF | - | 25 | ns | |
| Switching Characteristics | |||||
| Total gate charge | QG | VDD=100V, ID=20A, VGS=0 to10V | - | 97 | nC |
| Gate-source charge | QGS | - | 14 | nC | |
| Gate-drain charge | QGD | - | 39 | nC | |
| Diode Characteristics | |||||
| Drain-source diode forward voltage | VSD | VGS=0V, IS=40A | - | - | 1.5 V |
| Continuous drain-source current | ISD | Integral PN-diode in MOSFET | - | - | 40 A |
| Pulsed drain-source current | ISM | - | - | 160 A | |
| Reverse recovery time | trr | VGS=0V,IF=20A, diF/dt=100A/s | - | 280 | ns |
| Reverse recovery charge | Qrr | - | 420 | C | |
2410010000_KIA-Semicon-Tech-KNH9120A_C176879.pdf
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