Power electronics solution KIA Semicon Tech KNF4360A 4A 600V N channel MOSFET for switching circuits
Key Attributes
Model Number:
KNF4360A
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-
RDS(on):
2.3Ω@10V,2.0A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.55pF
Number:
1 N-channel
Input Capacitance(Ciss):
511pF
Output Capacitance(Coss):
56.6pF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
15.3nC@10V
Mfr. Part #:
KNF4360A
Package:
TO-220F
Product Description
Product Overview
The KIA SEMICONDUCTORS 4360A is a 4.0A, 600V N-CHANNEL MOSFET designed for high-frequency switching applications. It features low on-resistance (RDS(ON) =1.9 typ. @ VGS=10V, ID=2A), fast switching speeds, 100% avalanche testing, and improved dv/dt capability. This MOSFET is suitable for use in high frequency switching mode power supplies, Uninterruptible Power Supplies (UPS), and electronic ballasts.
Product Attributes
- Brand: KIA
Technical Specifications
| Part Number | Package | Drain-source voltage (VDSS) | Gate-source voltage (VGSS) | Drain current continuous (ID) @ TC=25C | Drain current continuous (ID) @ TC=100C | Drain current pulsed (IDM) | Avalanche energy Single pulse (EAS) | Peak diode recovery dv/dt | Total power dissipation (PD) @ TC=25C | Derate above 25C | Thermal Resistance Junction to Case (RJC) | Storage temperature (TSTG) | Drain-source breakdown voltage (BVDSS) @ VGS=0V,ID=250A | Zero gate voltage drain current (IDSS) @ VDS=600V ,VGS=0V | Gate-body leakage Current (IGSS) | Gate threshold voltage (VGS(TH)) @ VDS=VGS, ID=250A | Static drain-source on-resistance (RDS(ON)) @ VGS=10V,ID=2.0A | Forward Transconductance (GFS) @ VDS=30V,ID=2.0A | Input capacitance (CISS) @ VDS=25V,VGS=0V, f=1MHz | Output capacitance (COSS) | Reverse transfer capacitance (CRSS) | Turn-on delay time (tD(ON)) | Rise time (tR) | Turn-off delay time (tD(OFF)) | Fall time (tF) | Total gate charge (QG) | Gate-source charge (QGS) | Gate-drain charge (QGD) | Drain-source diode forward voltage (VSD) @ VGS=0V, ISD=4.0A | Continuous drain-source current (ISD) | Pulsed drain-source current (ISM) | Reverse recovery time (tRR) | Reverse recovery charge (QRR) |
| KND4360A | TO-252 | 600 V | 30 V | 4.0 A | 2.78 A | 16 A | 180 mJ | 4.8 V/ns | 44.6 W | 0.357 W/C | 3.75 C/W | -55~+150 C | 600 V | 1 A | 100 nA | 2.0 - 4.0 V | 1.9 - 2.3 | 5.5 S | 511 pF | 56.6 pF | 5.55 pF | 11.3 ns | 14.7 ns | 37.6 ns | 10.4 ns | 15.3 nC | 2.45 nC | 6.56 nC | - 1.4 V | 4 A | 16 A | 315 ns | 1.83 C |
| KNU4360A | TO-251 | 600 V | 30 V | 4.0* A | 2.78* A | 16* A | 180 mJ | 4.8 V/ns | 44.6 W | 0.357 W/C | 2.8 C/W | -55~+150 C | 600 V | 1 A | 100 nA | 2.0 - 4.0 V | 1.9 - 2.3 | 5.5 S | 511 pF | 56.6 pF | 5.55 pF | 11.3 ns | 14.7 ns | 37.6 ns | 10.4 ns | 15.3 nC | 2.45 nC | 6.56 nC | - 1.4 V | 4 A | 16 A | 315 ns | 1.83 C |
| KNP4360A | TO-220 | 600 V | 30 V | 4.0 A | 2.78 A | 16 A | 180 mJ | 4.8 V/ns | 100 W | 0.8 W/C | 1.25 C/W | -55~+150 C | 600 V | 1 A | 100 nA | 2.0 - 4.0 V | 1.9 - 2.3 | 5.5 S | 511 pF | 56.6 pF | 5.55 pF | 11.3 ns | 14.7 ns | 37.6 ns | 10.4 ns | 15.3 nC | 2.45 nC | 6.56 nC | - 1.4 V | 4 A | 16 A | 315 ns | 1.83 C |
| KNF4360A | TO-220F | 600 V | 30 V | 4.0* A | 2.78* A | 16* A | 180 mJ | 4.8 V/ns | 44.6 W | 0.357 W/C | 3.75 C/W | -55~+150 C | 600 V | 1 A | 100 nA | 2.0 - 4.0 V | 1.9 - 2.3 | 5.5 S | 511 pF | 56.6 pF | 5.55 pF | 11.3 ns | 14.7 ns | 37.6 ns | 10.4 ns | 15.3 nC | 2.45 nC | 6.56 nC | - 1.4 V | 4 A | 16 A | 315 ns | 1.83 C |
2409302333_KIA-Semicon-Tech-KNF4360A_C176831.pdf
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