120A 85V N Channel MOSFET KIA Semicon Tech KCB3008A for Synchronous Rectification and Power Circuits
Key Attributes
Model Number:
KCB3008A
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-
RDS(on):
5.5mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
-
Output Capacitance(Coss):
545pF
Input Capacitance(Ciss):
4.03nF
Pd - Power Dissipation:
220W
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
KCB3008A
Package:
TO-263
Product Description
Product Overview
The KIA SEMICONDUCTORS KCX3008A is a 120A, 85V N-CHANNEL MOSFET utilizing advanced SGT technology. It offers extremely low RDS(on) of typ=4.5 m@Vgs=10V and an excellent gate charge x RDS(on) product (FOM). This MOSFET is suitable for motor drives, synchronous rectification, DC/DC conversion, and general-purpose applications.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings (TC=25 C unless otherwise specified) | ||||||
| Drain-to-Source Voltage | VDSS | 85 | V | |||
| Continuous Drain Current | ID | TC=25 C (Silicon limited) | 160 | A | ||
| TC=25 C (Package limited) | 120 | |||||
| TC=100 C (Silicon limited) | 100 | |||||
| Pulsed drain current | IDP | (TC = 25C, tp limited by Tjmax) | 480 | A | ||
| Avalanche energy, single pulse | EAS | (L=0.5mH, Rg=25) | 60 | mJ | ||
| Gate-Source voltage | VGS | 20 | V | |||
| Power dissipation | Ptot | (TC = 25 C) | 220 | W | ||
| Junction & Storage Temperature Range | TJ& TSTG | -55 | 175 | C | ||
| Thermal Characteristics | ||||||
| Thermal resistance, junction-ambient | RJA | 0.7 | C/W | |||
| Thermal resistance, Junction-case | RJC | 60 | ||||
| Electrical Characteristics (TJ=25C, unless otherwise notes) | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 85 | 90 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=85V , VGS=0V ,Tj=25 C | - | - | 1 | A |
| VDS=85V , VGS=0V, Tj=125 C | - | 5 | - | |||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A ,Tj=25 C | 2.0 | 3.0 | 4.0 | V |
| Gate leakage current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-source on-resistance | RDS(on) | VGS=10V,ID=50A, Tj=25 C | - | 4.5 | 5.5 | m |
| Transconductance | gfs | VDS=5V,ID=50A | - | 80 | - | S |
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V F=1MHz | - | 1.5 | - | |
| Input capacitance | Ciss | VDS=40V,VGS=0V, F=1MHz | - | 4030 | - | pF |
| Output capacitance | Coss | - | 545 | - | pF | |
| Reverse transfer capacitance | Crss | - | 35 | - | pF | |
| Turn-on delay time | td(on) | VDS=40V,Tj=25 C, VGS=10V,RL=3 | - | 20 | - | ns |
| Rise time | tr | - | 38 | - | ns | |
| Turn-off delay time | td(off) | - | 45 | - | ns | |
| Fall time | tf | - | 20 | - | ns | |
| Gate Charge Characteristics | ||||||
| Total gate charge | Qg | VDS=40V,ID=25A, VGS=10V, F=1MHz | - | 65 | - | nC |
| Gate-source charge | Qgs | - | 25 | - | nC | |
| Gate-drain charge | Qgd | - | 14 | - | nC | |
| Diode Characteristics | ||||||
| Diode forward voltage | VSD | VGS=0V,ISD=50A | - | 0.95 | 1.4 | V |
| Reverse recovery time | trr | IF=20A DlF/dt=500A/s | - | 60 | - | ns |
| Reverse recovery charge | Qrr | - | 340 | - | nC | |
2409302333_KIA-Semicon-Tech-KCB3008A_C1509103.pdf
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