Power MOSFET KIA Semicon Tech KNF6165A 650 Volt 10 Amp TO220 Package for Switching Applications
Key Attributes
Model Number:
KNF6165A
Product Custom Attributes
Configuration:
Half-Bridge
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
900mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.554nF
Output Capacitance(Coss):
153pF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
KNF6165A
Package:
TO-220F-3
Product Description
Product Overview
The KNX6165A is an N-channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. It is suitable for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts utilizing half-bridge topology. Key features include ROHS compliance, a low on-resistance of 0.6 (typ) at VGS=10V, minimized switching loss due to low gate charge, and a fast recovery body diode.
Product Attributes
- Brand: KIA
- Certifications: ROHS Compliant
Technical Specifications
| Part Number | Package | Drain-to-Source Voltage (VDSS) | Continuous Drain Current (ID) | RDS(ON) Typ () | Gate Threshold Voltage (VGS(th)) Typ (V) | Power Dissipation (PD) Typ (W) |
| KNX6165A | TO-220F | 650 V | 10 A | 0.6 | 2.0 | 50 |
| KNF6165A | TO-220 | 650 V | 10 A | 0.6 | 2.0 | 216 |
| KNP6165A | TO-220 | 650 V | 10 A | 0.6 | 2.0 | 216 |
2411121021_KIA-Semicon-Tech-KNF6165A_C176872.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
