Silicon Carbide Diode KNSCHA KN3D20065D High Blocking Voltage and Zero Recovery Current for Operation
Key Attributes
Model Number:
KN3D20065D
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
60A
Reverse Leakage Current (Ir):
12uA
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.45V
Current - Rectified:
30A
Mfr. Part #:
KN3D20065D
Package:
TO-247-3
Product Description
Product Overview
The Silicon Carbide Schottky KN3D10065H Diode is a high-performance diode designed for demanding applications. It offers zero forward/reverse recovery current, high blocking voltage, and high-frequency operation, leading to higher system efficiency and reliability. Its positive temperature coefficient on VF and temperature-independent switching behavior make it suitable for parallel device configurations without thermal runaway and for high-temperature applications.
Product Attributes
- Brand: KNSCHA
- Material: Silicon Carbide
Technical Specifications
| Parameter | Symbol | Test conditions | Value | Unit |
| Peak Repetitive Reverse Voltage | VRRM | 650 | V | |
| Peak Reverse Surge Voltage | VRSM | 650 | V | |
| DC Blocking Voltage | VR | 650 | V | |
| Continuous Forward Current | IF | TC=25C | 30 | A |
| TC=135C | 12 | A | ||
| TC=145C | 10 | A | ||
| Non repetitive Forward Surge Current | IFSM | TC = 25C, tp=10 ms, Half Sine Pulse | 60 | A |
| TC = 150C, tp=10 ms, Half Sine Pulse | 50 | |||
| TC = 25C, tp=10 s, Square | 460 | |||
| Repetitive peak Forward Surge Current | IFRM | TC = 25C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse | 50 | A |
| TC = 150C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse | 40 | |||
| Total power dissipation | PD | TC=25C | 88 | W |
| Operating Junction Temperature | TJ | -55 to 175 | C | |
| Storage Temperature | TSTG | -55 to 175 | C | |
| DC Blocking Voltage | VDC | IR = 250A,TJ = 25C | 650 | V |
| Forward Voltage | VF | IF = 10A, TJ = 25C | 1.45 - 1.8 | V |
| IF = 10A, TJ = 125C | 1.6 | |||
| IF = 10A, TJ = 175C | 1.7 | |||
| Reverse Current | IR | VR = 650V, TJ = 25C | 12 - 80 | uA |
| VR = 650V, TJ = 125C | 68 | |||
| VR = 650V, TJ = 175C | 190 | |||
| Total Capacitive Charge | QC | VR = 400V | 23 | nC |
| Total Capacitance | C | VR = 1V, TJ = 25C, Freq = 1MHz | 380 | pF |
| VR = 200V, TJ = 25C, Freq = 1MHz | 48 | |||
| VR = 400V, TJ = 25C, Freq = 1MHz | 31 | |||
| Thermal Resistance | Rth(j-c) | junction-case | 1.7 | C/W |
2410121327_KNSCHA-KN3D20065D_C5373178.pdf
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