PNP Transistor KTP MMBT5401 Designed for Medium Power Amplification and Switching in SOT23 Package

Key Attributes
Model Number: MMBT5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
-
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT5401
Package:
SOT-23
Product Description

MMBT5401 PNP Transistor

The MMBT5401 is a PNP transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5551.

Product Attributes

  • Brand: KTP Semiconductor
  • Package Type: SOT-23

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Collector-Base VoltageVCBO-160V
Collector-Emitter VoltageVCEO-150V
Emitter-Base VoltageVEBO-5V
Collector CurrentIC0.6A
Collector Power DissipationPD0.3W
Junction Temperature (MAX.)Tj150
Storage TemperatureTstg-55+150
Collector-base breakdown voltageV(BR)CBOIC=-100A, IE=0-160V
Collector-emitter breakdown voltageV(BR)CEOIC=-1mA, IB=0-150V
Emitter-base breakdown voltageV(BR)EBOIE=-10A, IC=0-5V
Collector cut-off currentICBOVCB=-120V, IE=0-0.1A
Emitter cut-off currentIEBOVEB=-4V, IC=0-0.1A
DC current gainhFE(1)VCE=-5V, IC=-1mA80
DC current gainhFE(2)VCE=-5V, IC=-10mA100300
DC current gainhFE(3)VCE=-5V, IC=-50mA50
Collector-emitter saturation voltageVCE(sat)1IC=-10mA, IB=-1mA-0.2V
Collector-emitter saturation voltageVCE(sat)2IC=-50mA, IB=-5mA-0.5V
Base-emitter saturation voltageVBE(sat)1IC=-10mA, IB=-1mA-1V
Base-emitter saturation voltageVBE(sat)2IC=-50mA, IB=-5mA-1V
Transition frequencyFTVCE=-5V,IC=-10mA, f=30MHz100MHz

hFE Classification

RANKRANGE
L100-200
H200-300

*Pulse test: pulse width 300s, duty cycle 2.0%.


2412041501_KTP-MMBT5401_C42404751.pdf

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