KUU WPM2341 3 TR P Channel TrenchFET Power MOSFET designed for load switching and DC DC converter
Key Attributes
Model Number:
WPM2341-3/TR
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.7A
Operating Temperature -:
-
RDS(on):
135mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
110pF
Number:
1 P-Channel
Output Capacitance(Coss):
145pF
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
633pF
Gate Charge(Qg):
8nC@0V
Mfr. Part #:
WPM2341-3/TR
Package:
SOT-23
Product Description
Product Overview
The WPM2341-3/TR is a P-Channel TrenchFET Power MOSFET designed for high-performance applications. It features ultra-low on-resistance and is available in tape and reel packaging, making it suitable for automated assembly. Key applications include load switching for portable devices and DC/DC converters.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | VGS = 0V, ID = -250A | -20 | V | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS =VGS, ID = -250A | -0.4 | -1.2 | V | |
| Gate-Source Leakage | IGSS | VDS =0V, VGS = 12V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -20V, VGS =0V | -1 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -4.5V, ID = -3.7A | 50 | 65 | m | |
| Drain-Source On-State Resistance | RDS(on) | VGS = -2.5V, ID = -3A | 80 | 135 | m | |
| Forward Transconductance | gfs | VDS = -4.5V, ID = -3.7A | 6 | S | ||
| Diode Forward Voltage | VSD | IS=-1A, VGS=0V | -0.8 | -1.2 | V | |
| Continuous Source-Drain Diode Current | IS | -1.3 | A | |||
| Input Capacitance | Ciss | VDS = -10V,VGS =0V, f=1MHz | 633 | pF | ||
| Output Capacitance | Coss | VDS = -10V,VGS =0V, f=1MHz | 145 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = -10V,VGS =0V, f=1MHz | 110 | pF | ||
| Total Gate Charge | Qg | VDS = -10V,VGS = -4.5V, ID = -3.7A | 8.0 | nC | ||
| Gate-Source Charge | Qgs | VDS = -10V,VGS = -4.5V, ID = -3.7A | 1.2 | nC | ||
| Gate-Drain Charge | Qgd | VDS = -10V,VGS = -4.5V, ID = -3.7A | 2.8 | nC | ||
| Gate Resistance | Rg | f=1MHz | 6.5 | |||
| Turn-on Delay Time | td(on) | VDS= -10V RL=6, ID -1A, VGEN=- 4.5V,Rg=3 | 12 | ns | ||
| Rise Time | tr | VDS= -10V RL=6, ID -1A, VGEN=- 4.5V,Rg=3 | 30 | ns | ||
| Turn-off Delay Time | td(off) | VDS= -10V RL=6, ID -1A, VGEN=- 4.5V,Rg=3 | 60 | ns | ||
| Fall Time | tf | VDS= -10V RL=6, ID -1A, VGEN=- 4.5V,Rg=3 | 50 | ns | ||
| Body Diode Reverse Recovery Time | Trr | IF= -3.7A, dI/dt=100A/s | 29 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF= -3.7A, dI/dt=100A/s | 11 | nC |
2409302135_KUU-WPM2341-3-TR_C20608781.pdf
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