power switching MOSFET KUU AO3409 designed for portable device load management and DC DC converters
Key Attributes
Model Number:
AO3409
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.6A
RDS(on):
170mΩ@4.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
38pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
302pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.8nC@10V
Mfr. Part #:
AO3409
Package:
SOT-23
Product Description
Product Overview
This P-Channel TrenchFET Power MOSFET is designed for applications such as load switching in portable devices and DC/DC converters. It offers efficient power management with low on-state resistance and robust performance.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = -250A | -30 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = -250A | -1 | -2.5 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = 20V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = -30V, VGS =0V | -1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS = -10V, ID = -2.6A | 78 | 120 | m | |
| VGS = -4.5V, ID = -2A | 112 | 170 | m | |||
| Forward transconductance | gfs | VDS = -4.5V, ID = -2.6A | 5.5 | S | ||
| Diode forward voltage | VSD | IS=-1A,VGS=0V | -0.8 | -1.3 | V | |
| Input capacitance | Ciss | VDS = -15V,VGS =0V, f=1MHz | 302 | pF | ||
| Output capacitance | Coss | VDS = -15V,VGS =0V, f=1MHz | 51 | pF | ||
| Reverse transfer capacitance | Crss | VDS = -15V,VGS =0V, f=1MHz | 38 | pF | ||
| Total gate charge | Qg | VDS = -15V,VGS = - 10V, ID =-2.6A | 6.8 | nC | ||
| Gate-source charge | Qgs | VDS = -15V,VGS = - 10V, ID =-2.6A | 1.6 | nC | ||
| Gate-drain charge | Qgd | VDS = -15V,VGS = - 10V, ID =-2.6A | 1 | nC | ||
| Gate resistance | Rg | f=1MHz | 12 | 18 | ||
| Switching | td(on) | VDS= -15V RL=6, ID -1A, VGEN=- 10V,Rg=3 | 7.5 | ns | ||
| tr | VDS= -15V RL=6, ID -1A, VGEN=- 10V,Rg=3 | 3.2 | ns | |||
| Switching | td(off) | VDS= -15V RL=6, ID -1A, VGEN=- 10V,Rg=3 | 17 | ns | ||
| Switching | tf | VDS= -15V RL=6, ID -1A, VGEN=- 10V,Rg=3 | 6.8 | ns | ||
| Continuous Source-Drain Diode Current | IS | Tc=25 | -2 | A | ||
| Pulsed Diode forward Curren | ISM | Tc=25 | -20 | A |
2410121805_KUU-AO3409_C28310446.pdf
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