Power Management MOSFET KUU KAO3402 N Channel 30 Volt for Load Switching in DC DC Converter Circuits
Key Attributes
Model Number:
KAO3402
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-
RDS(on):
110mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Output Capacitance(Coss):
54.5pF
Input Capacitance(Ciss):
390pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
14nC@4.5V
Mfr. Part #:
KAO3402
Package:
SOT-23
Product Description
Product Overview
The KAO3402 is an N-Channel 30-V (D-S) MOSFET featuring TrenchFET technology. It is designed for load switching in portable devices and DC/DC converters, offering efficient power management with low on-state resistance at various gate-source voltages.
Product Attributes
- Brand: CJ-ELE
- Model: KAO3402
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 4 | A | |||
| Pulsed Diode Current | IDM | 15 | A | |||
| Continuous Source-Drain Current (Diode Conduction) | IS | 0.8 | A | |||
| Power Dissipation | PD | 1.4 | W | |||
| Thermal Resistance from Junction to Ambient (t5s) | RJA | 125 | /W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = 250A | 30 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = 250A | 0.6 | 1.4 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = 12V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = 30V, VGS =0V | 1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS = 10V, ID = 1A | 37 | 55 | m | |
| VGS = 4.5V, ID = 1A | 42 | 70 | m | |||
| VGS = 2.5V, ID = 1A | 53 | 110 | m | |||
| Forward transconductance | gfs | VDS = 4.5V, ID = 4A | 8 | S | ||
| Diode forward voltage | VSD | IS=1A,VGS=0V | 0.8 | 1.3 | V | |
| Input capacitance | Ciss | VDS = 15V,VGS =0V, f=1MHz | 390 | pF | ||
| Output capacitance | Coss | VDS = 15V,VGS =0V, f=1MHz | 54.5 | pF | ||
| Reverse transfer capacitance | Crss | VDS = 15V,VGS =0V, f=1MHz | 41 | pF | ||
| Total gate charge | Qg | VDS = 15V,VGS = 4.5V, ID = 4A | 11 | 14 | nC | |
| Gate-source charge | Qgs | VDS = 15V,VGS = 4.5V, ID = 4A | 1.3 | nC | ||
| Gate-drain charge | Qg d | VDS = 15V,VGS = 4.5V, ID = 4A | 2.8 | nC | ||
| Gate resistance | Rg | f=1MHz | 3 | |||
| Turn-on delay time | td(on) | VDS= 15V RL=4, ID 1A, VGEN= 4.5V,Rg=6 | 3.3 | ns | ||
| Rise time | tr | VDS= 15V RL=4, ID 1A, VGEN= 4.5V,Rg=6 | 1 | ns | ||
| Turn-off delay time | td(off) | VDS= 15V RL=4, ID 1A, VGEN= 4.5V,Rg=6 | 21.7 | ns | ||
| Fall time | tf | VDS= 15V RL=4, ID 1A, VGEN= 4.5V,Rg=6 | 2.1 | ns | ||
| Continuous Source-Drain Diode Current | IS | Tc=25 | 1.2 | A | ||
| Body Diode Reverse Recovery Time | trr | IF=4A, dl/dt=100A/us | 12 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=4A, dl/dt=100A/us | 6.3 | nC |
2410121912_KUU-KAO3402_C2891693.pdf
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