P Channel Enhancement Mode MOSFET Leiditech LM5D50P10 with 100V Drain Source Voltage and 50A Current
Key Attributes
Model Number:
LM5D50P10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
RDS(on):
62mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF@50V
Number:
1 P-Channel
Pd - Power Dissipation:
140W
Input Capacitance(Ciss):
2.12nF@50V
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
LM5D50P10
Package:
DFN-8(5x6)
Product Description
Product Overview
The LM5D50P10 is a P-Channel Enhancement Mode MOSFET designed for various applications. It features a -100V Drain-Source Voltage and a continuous drain current capability of -50A at 25 (VGS @ -10V). With a low on-resistance of 40m (Typ.) at VGS=-10V and ID=-20A, and a total power dissipation of 140W at 25, this MOSFET offers efficient performance. It is suitable for applications requiring high current handling and robust operation, as indicated by its single pulse avalanche energy rating of 87mJ and avalanche current of -35A. The device is packaged in a DFN5*6-8L package.
Product Attributes
- Brand: Leiditech
- Model: LM5D50P10
- Channel Type: P-Channel
- Mode: Enhancement Mode
- Package: DFN5*6-8L
- Origin: Shanghai Leiditech Electronic Co.,Ltd
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | |||||||
| VDS | Drain-Source Voltage | -100 | V | ||||
| VGS | Gate-Source Voltage | 20 | V | ||||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -50 | A | ||||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1 | -28 | A | ||||
| IDM | Pulsed Drain Current2 | -150 | A | ||||
| EAS | Single Pulse Avalanche Energy3 | 87 | mJ | ||||
| IAS | Avalanche Current | -35 | A | ||||
| PD@TC=25 | Total Power Dissipation4 | 140 | W | ||||
| TSTG | Storage Temperature Range | -55 | 150 | ||||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||||
| RJA | Thermal Resistance Junction-Ambient | 125 | /W | ||||
| RJC | Thermal Resistance Junction-Case1 | 1.1 | /W | ||||
| Electrical Characteristics (TJ =25 , unless otherwise noted) | |||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250A | -100 | - | - | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS=-100V, VGS=0V | - | - | -1.0 | A | |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= 20V | - | - | 100 | nA | |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=-250A | -1.0 | -1.6 | -2.5 | V | |
| RDS(on) | Static Drain-Source on-Resistance | VGS=-10V, ID=-20A | - | 40 | 52 | m | |
| RDS(on) | Static Drain-Source on-Resistance | VGS=-4.5V, ID=-10A | - | 44 | 62 | m | |
| Ciss | Input Capacitance | VDS=-50V, VGS=0V, f=1.0MHz | - | 2120 | - | pF | |
| Coss | Output Capacitance | - | 194 | - | pF | ||
| Crss | Reverse Transfer Capacitance | - | 13 | - | pF | ||
| Qg | Total Gate Charge | VDS=-50V, ID=-5A, VGS=-10V | - | 40 | - | nC | |
| Qgs | Gate-Source Charge | - | 7.8 | - | nC | ||
| Qgd | Gate-Drain(Miller) Charge | - | 8.6 | - | nC | ||
| td(on) | Turn-on Delay Time | VDD=-50V, ID=-5A, RG=6, VGS=-10V | - | 13 | - | ns | |
| tr | Turn-on Rise Time | - | 39 | - | ns | ||
| td(off) | Turn-off Delay Time | - | 100.1 | - | ns | ||
| tf | Turn-off Fall Time | - | 105.3 | - | ns | ||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | -35 | A | ||
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | -140 | A | ||
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=-30A | - | - | -1.2 | V | |
| trr | Body Diode Reverse Recovery Time | TJ=25, IF=-5A,dI/dt=100A/s | - | 104 | - | ns | |
| Qrr | Body Diode Reverse Recovery Charge | - | 280 | - | nC | ||
| Package Mechanical Data-DFN5*6-8L Single | |||||||
| Symbol | Common | mm | Inch | Min | Max | Min | Max |
| A | 1.03 | 1.17 | 0.0406 | 0.0461 | |||
| b | 0.34 | 0.48 | 0.0134 | 0.0189 | |||
| c | 0.824 | 0.0970 | 0.0324 | 0.082 | |||
| D | 4.80 | 5.40 | 0.1890 | 0.2126 | |||
| D1 | 4.11 | 4.31 | 0.1618 | 0.1697 | |||
| D2 | 4.80 | 5.00 | 0.1890 | 0.1969 | |||
| E | 5.95 | 6.15 | 0.2343 | 0.2421 | |||
| E1 | 5.65 | 5.85 | 0.2224 | 0.2303 | |||
| E2 | 1.60 | / | 0.0630 | / | |||
| e | 1.27 BSC | 0.05 BSC | |||||
| L | 0.05 | 0.25 | 0.0020 | 0.0098 | |||
| L1 | 0.38 | 0.50 | 0.0150 | 0.0197 | |||
| L2 | 0.38 | 0.50 | 0.0150 | 0.0197 | |||
| H | 3.30 | 3.50 | 0.1299 | 0.1378 | |||
| I | / | 0.18 | / | 0.0070 | |||
Notes:
- 1: Data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
- 2: Data tested by pulsed, pulse width 300s, duty cycle 2%.
- 3: EAS data shows Max. rating. Test condition is VDD = -25V, VGS = -10V, L = 0.1mH, IAS = -24A.
- 4: Power dissipation is limited by 150 junction temperature.
- 5: Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121549_Leiditech-LM5D50P10_C3647071.pdf
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