Leiditech LM 2N7002LT1G Trench Power MV MOSFET N Channel Transistor for Direct Logic Level Interface
Key Attributes
Model Number:
LM-2N7002LT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
5.5pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
16pF@30V
Gate Charge(Qg):
2.4nC@10V
Mfr. Part #:
LM-2N7002LT1G
Package:
SOT-23
Product Description
Product Overview
The LM-2N7002LT1G is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. Designed as a voltage-controlled small signal switch, it offers low input capacitance, fast switching speed, and low input/output leakage. This MOSFET is suitable for battery-operated systems, solid-state relays, and direct logic-level interface applications with TTL/CMOS.
Product Attributes
- Brand: Leiditech (implied by domain and part number prefix)
- Product Type: Enhancement Mode Field Effect Transistor
- Channel Type: N-Channel
- Technology: Trench Power MV MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Limit | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-source Voltage | VDS | 60 | V | |
| Drain Current | ID | TA=25 @ Steady State | 340 | mA |
| RDS(ON) | VGS=10V | <2.5 | ohm | |
| RDS(ON) | VGS=4.5V | <3.0 | ohm | |
| Absolute Maximum Ratings | ||||
| Drain-source Voltage | VDS | (TA=25 unless otherwise noted) | 60 | V |
| Gate-source Voltage | VGS | 20 | V | |
| Drain Current (TA=70 @ Steady State) | ID | 272 | mA | |
| Pulsed Drain Current | IDM | 1.5 | A | |
| Total Power Dissipation @ TA=25 | PD | 350 | mW | |
| Thermal Resistance Junction-to-Ambient @ Steady State | RJA | 357 | / W | |
| Junction and Storage Temperature Range | TJ ,TSTG | -55+150 | ||
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 60 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | A |
| Gate-Body Leakage Current | IGSS1 | VGS= 20V, VDS=0V | 100 | nA |
| Gate-Body Leakage Current | IGSS2 | VGS= 10V, VDS=0V | 50 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=-300mA | 2.5 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=200mA | 3.0 | |
| Diode Forward Voltage | VSD | IS=300mA,VGS=0V | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | 340 | mA | |
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHZ | 16 | pF |
| Output Capacitance | Coss | VDS=30V,VGS=0V,f=1MHZ | 10 | pF |
| Reverse Transfer Capacitance | Crss | VDS=30V,VGS=0V,f=1MHZ | 5.5 | pF |
| Total Gate Charge | Qg | VGS=10V,VDS=30V,ID=0.3A | 2.4 | nC |
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=30V, ID=300mA, RGEN=6 | 5 | ns |
| Turn-off Delay Time | tD(off) | VGS=10V,VDD=30V, ID=300mA, RGEN=6 | 17 | ns |
| Reverse recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dIS/dt=- 100A/s | 30 | ns |
| Ordering Information | ||||
| Preferred P/N | LM-2N7002LT1G | |||
| Packing Code | LT1G | |||
| Minimum Package (pcs) | 3000 | |||
| Inner Box Quantity (pcs) | 30000 | |||
| Outer Carton Quantity (pcs) | 120000 | |||
| Delivery Mode | 7" reel | |||
2409272300_Leiditech-LM-2N7002LT1G_C5353602.pdf
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