High Current Capability Silicon Schottky Barrier Diode KUU MBR20150DS for Low Voltage Applications

Key Attributes
Model Number: MBR20150DS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
300A
Reverse Leakage Current (Ir):
5uA@150V
Voltage - DC Reverse (Vr) (Max):
150V
Voltage - Forward(Vf@If):
900mV@10A
Current - Rectified:
20A
Mfr. Part #:
MBR20150DS
Package:
TO-252
Product Description

Product Overview

The MBR20150DS is a Silicon Schottky Barrier Diode featuring a guard ring die construction for transient protection, low power loss, high efficiency, and high surge capability. It offers high current capability with a low forward voltage drop, making it suitable for low voltage, high frequency inverters, free-wheeling, and polarity protection applications. This product meets ROHS and Green Product requirements with full function reliability approval.

Product Attributes

  • Brand: MBR20150DS
  • Certifications: ROHS, Green Product
  • Material: Silicon Schottky Barrier Diode

Technical Specifications

Parameter Symbol Test Conditions Value Unit
ABSOLUTE MAXIMUM RATINGS
Peak repetitive reverse voltage VRRM (TA=25C, unless otherwise specified.) 150 V
Working peak reverse voltage VRWM (TA=25C, unless otherwise specified.) 150 V
DC blocking voltage VR (TA=25C, unless otherwise specified.) 150 V
RMS reverse voltage VR(RMS) (TA=25C, unless otherwise specified.) 105 V
Average rectified output current IO (TA=25C, unless otherwise specified.) 2010*2 A
Non-Repetitive peak forward surge current IFSM (8.3ms half sine wave) 150*2 A
Junction temperature Tj (TA=25C, unless otherwise specified.) 175 C
Storage temperature Tstg (TA=25C, unless otherwise specified.) -55 ~ +150 C
Typical total capacitance Cj (Ctot) VR=5V,f=1MHz 500 pF
Thermal Resistance from Junction to Ambient RJA TO-252 100 C/W
Thermal Resistance from Junction to Ambient RJA TO-220F 58 C/W
Thermal Resistance From Junction To Case RJC TO-252 5 C/W
Thermal Resistance From Junction To Case RJC TO-220F 3 C/W
ELECTRICAL CHARACTERISTICS
Reverse voltage V(BR) IR=0.1mA 150 V
Reverse current IR VR=150V, Tj =25 0.5 uA
Reverse current IR VR=150V, Tj =125 2.0 mA
Forward voltage VF IF=5A, Tj =25 0.76 V
Forward voltage VF IF=5A, Tj =125 0.64 V
Forward voltage VF IF=10A, Tj =25 0.83 - 0.90 V
Forward voltage VF IF=10A, Tj =125 0.71 V

2412121420_KUU-MBR20150DS_C42411722.pdf

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