High Voltage Silicon Bridge Rectifier LGE GBU8M with 1000V Peak Voltage and 8 Ampere Forward Current

Key Attributes
Model Number: GBU8M
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.1V@8A
Current - Rectified:
8A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
GBU8M
Package:
GBU
Product Description

Silicon Bridge Rectifiers GBU8A-GBU8M

The GBU8A-GBU8M series are silicon bridge rectifiers designed for printed circuit board applications. They feature a high PRV rating up to 1000V and a surge overload rating of 200 Amperes peak. Their reliable, inexpensive construction utilizes a molded plastic technique with glass passivated junctions, making them ideal for various electronic designs. These rectifiers are lead solderable per MIL-STD-202 method 208.

Product Attributes

  • Brand: LGESEMI (implied from URL)
  • Construction: Molded plastic technique, glass passivated junctions
  • Solderability: Per MIL-STD-202 method 208

Technical Specifications

CharacteristicSymbolGBU8AGBU8BGBU8DGBU8GGBU8JGBU8KGBU8MUnits
Maximum recurrent peak reverse voltageVRRM501002004006008001000V
Maximum RMS voltageVRMS3570140280420560700V
Maximum DC blocking voltageVDC501002004006008001000V
Maximum average forward Output current @TC=100IF(AV)8.0A
Peak forward surge current 8.3ms single half-sine-wav superimposed on rated loadIFSM200A
It Rating for fusing @Tj=25It9166AS
Operating junction temperature rangeTJ - 55 ---- + 150
Storage temperature rangeTSTG - 55 ---- + 150
Maximum instantaneous forward voltage @4.0AVF1.0V
Maximum reverse current @TA=25 at rated DC blocking voltageIR5.0A
Maximum reverse current @TA=125IR0.5mA
Typical thermal resistance (note2)RJA2/W
Typical thermal resistance (note1)RJC1.6/W
Typical junction capacitance per element(note 3)CJ211pF

Notes:
1. Unit case mounted on 3.2x3.2x0.12" thick (6.2x8.2x0.3cm) AI. Plate.
2. Units mounted in free air, no heat sink on P.C.B., 0.5x0.5"(12x12mm) copper pads, 0.375"(9.5mm) lead length.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0 volts.


2410121725_LGE-GBU8M_C970319.pdf

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