AC Power Control TRIAC KY BTA08-800B 8A Current Rating Semiconductor Device for Various Applications
Key Attributes
Model Number:
BTA08-800B
Product Custom Attributes
Holding Current (Ih):
50mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
8A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
84A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BTA08-800B
Package:
TO-220AB-3
Product Description
ShenZhenHanKingyuan Electronic CO.,Ltd BTA/BTB08 Series 8A TRIACs
The BTA/BTB08 Series 8A TRIACs from ShenZhenHanKingyuan Electronic CO.,Ltd are high-performance semiconductor devices designed for AC power control applications. Available in 3 and 4 quadrant configurations, these TRIACs offer reliable switching and regulation capabilities. They are suitable for a wide range of applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
- Product Series: BTA/BTB08 Series
- Current Rating: 8A
- Origin: Shenzhen
- Trademark: KY logo (registered)
Technical Specifications
| Symbol | Items | Conditions | Ratings | Unit |
| VDRM / VRRM | Repetitive Peak Off-State Voltage | BTA08-600 | 600 | V |
| VDRM / VRRM | Repetitive Peak Off-State Voltage | BTA08-800 | 800 | V |
| IT(RMS) | R.M.S On-State Current | Tc=110C | 8 | A |
| ITSM | Surge On-State Current | Tp=10ms | 80/84 | A |
| It | It for fusing | Tp=10ms | 30 | As |
| PG(AV) | Average Gate Power Dissipation | Tj=125C | 1 | W |
| IGM | Peak Gate Current | tp=20us, Tj=125C | 4 | A |
| Tj | Operating Junction Temperature | -40~125 | C | |
| TSTG | Storage Temperature | -40~150 | C | |
| IDRM | Repetitive Peak Off-State Current | Tj=25C | 5 | uA |
| IDRM | Repetitive Peak Off-State Current | Tj=125C | 1 | mA |
| IRRM | Repetitive Peak Reverse Current | Tj=25C | 5 | uA |
| IRRM | Repetitive Peak Reverse Current | Tj=125C | 1 | mA |
| VTM | Forward "on" voltage | IT=17A, tp=380us | 1.55 | V |
| VGT | Gate trigger voltage | VD=12V, RL=30 | 1.3 | V |
| di/dt | Critical rate of rise of on-state current | F=100Hz, IG=2xIGT, tr 100ns | 50 (I,II,III) / 10 (IV) | A/us |
| IGT | Gate trigger current | VD=12V, RL=30 | 5 / 10 / 25 / 50 (I,II,III) / 50 / 100 (IV) | mA |
| IH | Holding current | IT=0.2A | 10 / 15 / 35 / 60 / 25 / 50 | mA |
| VGD | Gate non-trigger voltage | ALL, VD=VDRM, TJ=125C, RL=3.3K | 0.2 | V |
| dv/dt | Critical-rate of rise of commutation voltage | TJ=125C, VD=2/3VDRM, Gate | 40 / 100 / 400 / 1000 / 200 / 400 | V/us |
| Rth(j-c) | Thermal resistance Junction to case | 3.7 | C/W | |
| Rth(j-a) | Thermal resistance Junction to ambient | 50 | C/W |
2410121317_KY-BTA08-800B_C2831699.pdf
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