SCR Thyristor KY TYN616 Featuring Peak Gate Power Dissipation of 4W and Voltage Ratings of 600V 800V
Key Attributes
Model Number:
TYN616
Product Custom Attributes
Holding Current (Ih):
40mA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
160A
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
-
Mfr. Part #:
TYN616
Package:
TO-220
Product Description
Product Overview
The TYN616 Series from ShenZhenHanKingyuan Electronic CO.,Ltd are standard SCRs designed for various applications. These sensitive gate SCRs offer reliable performance with IT(RMS) of 16A and VGT of 1.5V. They are available in voltage ratings of 600V and 800V (VDRM/VRRM) and come in multiple package types including TO-220B, TO-263, TO-252, and TO-251.
Product Attributes
- Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
- Product Series: TYN616 Series
- Origin: Shenzhen
Technical Specifications
| Symbol | Parameter | Conditions | TYN616/TYN816 (600/800V) | Unit |
| VDRM, VRRM | Repetitive Peak Off-State Voltage | 600/800 | V | |
| IT(RMS) | R.M.S On-State Current | 16 | A | |
| IT(AV) | Average On-State Current | 10 | A | |
| ITSM | Surge On-State Current | F=50Hz, tp=10ms | 160 | A |
| It | It for fusing | Tp=10ms | 100 | As |
| PG(AV) | Average Gate Power Dissipation | Tj=125C | 1 | W |
| PGM | Peak Gate Power Dissipation | Tj=125C | 4 | W |
| Tj | Operating Junction Temperature | -40~125 | C | |
| TSTG | Storage Temperature | -40~150 | C | |
| IDRM | Repetitive Peak Off-State Current | Tc=25C | 10 | uA |
| IDRM | Repetitive Peak Off-State Current | Tc=125C | 1 | mA |
| IRRM | Repetitive Peak Reverse Current | Tc=25C | 10 | uA |
| IRRM | Repetitive Peak Reverse Current | Tc=125C | 1 | mA |
| VTM | Forward "on" voltage | IT=24A | 1.7 | V |
| VGD | Gate nontrigger voltage | VD=VDRM, Tj=125C, RL=3.3K | 0.25 | V |
| IL | Latching current | IG=1.2IGT | 50 | mA |
| IH | Holding current | VD=12V ,IGT=0.1A | 40 | mA |
| VGT | Gate trigger voltage | VD=12V ,IGT=0.1A | 1.0 | V |
| IGT | Gate trigger current | VD=12V,IT=0.1A | 20 | mA |
| dv/dt | Critical-rate of rise of commutation voltage | VD=2/3VDRM,Tj=110C,RGK=1K | 400 | V/us |
| di/dt | Critical-rate of rise of commutation current | IG=2XIG,tr100us,Tj=125C | 50 | A/us |
2410121257_KY-TYN616_C2831682.pdf
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