Metal to silicon rectifier diode KUU DS24W offering and low forward voltage for inverter circuits
Key Attributes
Model Number:
DS24W
Product Custom Attributes
Reverse Leakage Current (Ir):
1mA@40V
Non-Repetitive Peak Forward Surge Current:
60A
Voltage - DC Reverse (Vr) (Max):
40V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
550mV@2A
Current - Rectified:
2A
Mfr. Part #:
DS24W
Package:
SOD-123FL
Product Description
Product Overview
The DS22W series are metal-to-silicon rectifiers featuring majority carrier conduction. Designed for low voltage, high frequency applications such as inverters, wheeling, and polarity protection, these rectifiers offer low power loss, high efficiency, high current capability with low forward voltage (VF), and high surge capacity. They utilize glass passivation for enhanced reliability.
Product Attributes
- Brand: Yongyutai
- Origin: Not specified
- Material: Metal to Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model | VRRM (V) | VRMS (V) | VDC (V) | I(AV) @TL=100 (A) | IFSM (A) | VF @2.0A (V) | IR @Rated V, TJ=25 (mA) | IR @Rated V, TJ=100 (mA) | CJ (pF) | RJL (/W) | TJ () | TSTG () |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DS22W | 20 | 14 | 20 | 2.0 | 60 | 0.45 | 1.0 | 20 | 200 | 15 | -55 to +150 | -55 to +150 |
| DS23W | 30 | 21 | 30 | 2.0 | 60 | 0.5 | 1.0 | 20 | 200 | 15 | -55 to +150 | -55 to +150 |
| DS24W | 40 | 28 | 40 | 2.0 | 60 | 0.55 | 1.0 | 20 | 200 | 15 | -55 to +150 | -55 to +150 |
| DS25W | 50 | 35 | 50 | 2.0 | 60 | 0.7 | 1.0 | 20 | 200 | 15 | -55 to +150 | -55 to +150 |
| DS26W | 60 | 42 | 60 | 2.0 | 60 | 0.85 | 1.0 | 20 | 200 | 15 | -55 to +150 | -55 to +150 |
| DS28W | 80 | 56 | 80 | 2.0 | 60 | 0.92 | 1.0 | 20 | 200 | 15 | -55 to +150 | -55 to +150 |
| DS210W | 100 | 70 | 100 | 2.0 | 60 | 0.95 | 1.0 | 20 | 200 | 15 | -55 to +150 | -55 to +150 |
| DS215W | 150 | 100 | 150 | 2.0 | 60 | - | 1.0 | 20 | 200 | 15 | -55 to +150 | -55 to +150 |
| DS220W | 200 | 125 | 200 | 2.0 | 60 | - | 1.0 | 20 | 200 | 15 | -55 to +150 | -55 to +150 |
2410122028_KUU-DS24W_C41347893.pdf
Related Products
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
