High Reliability Silicon Schottky Diode KUU RB751V-40 Low Reverse Current for Switching Applications
Key Attributes
Model Number:
RB751V-40
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200mA
Reverse Leakage Current (Ir):
500nA@30V
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
370mV@1mA
Current - Rectified:
30mA
Mfr. Part #:
RB751V-40
Package:
SOD-323
Product Description
Product Overview
This silicon epitaxial planar Schottky barrier diode is a small surface mounting type device offering low reverse current and low forward voltage for high reliability. It is designed for high-speed switching applications.
Product Attributes
- Brand: Yongyutai
- Model: RB751V-40
- Package: SOD-323
Technical Specifications
| Parameter | Symbol | Value | Unit | Typ. | Max. |
| Peak Reverse Voltage | VRM | 40 | V | ||
| Reverse Voltage | VR | 30 | V | ||
| Mean Rectifying Current | IO | 30 | mA | ||
| Peak Forward Surge Current (60 Hz for 1 Cyc.) | IFSM | 200 | mA | ||
| Junction Temperature | Tj | 125 | OC | ||
| Storage Temperature Range | Tstg | - 40 to + 125 | OC | ||
| Forward Voltage at IF = 1 mA | VF | V | - | 0.37 | |
| Reverse Current at VR = 30 V | IR | A | - | 0.5 | |
| Capacitance Between Terminals at VR = 1 V, f = 1 MHz | CT | pF | 2 | - |
2410121615_KUU-RB751V-40_C20199348.pdf
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