Trench MOSFET KUU 50N06 Featuring Low Gate Charge and Low RDS ON for Battery Protection Applications
Key Attributes
Model Number:
50N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
21mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
96.9pF
Number:
1 N-channel
Output Capacitance(Coss):
108.5pF
Input Capacitance(Ciss):
1nF
Pd - Power Dissipation:
70W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
50N06
Package:
TO-252
Product Description
Product Overview
The 50N06 is an advanced trench MOSFET designed with high cell density and a low resistance package, resulting in extremely low RDS(ON). This device is optimized for load switch and battery protection applications, offering features such as fast switching due to low gate charge and low thermal resistance.
Product Attributes
- Brand: CJ-ELEc
- Model: 50N06
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID@TC=25 | 50 | A | |||
| ID@TC=75 | 35 | A | ||||
| ID@TC=100 | 30 | A | ||||
| Pulsed Drain Current | IDM | 104 | A | |||
| Total Power Dissipation | PD@TC=25 | 70 | W | |||
| PD@TA=25 | 2.8 | W | ||||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature | TSTG | -55 | 150 | |||
| Avalanche Current | IAS | 40 | A | |||
| Electronic Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS =0V, ID =250uA | 60 | V | ||
| Gate Threshold Voltage | VGS(TH) | VGS =VDS, ID =250uA | 1.0 | 1.5 | 2.2 | V |
| Drain-Source Leakage Current | IDSS | VDS=60V, VGS =0V | 1.0 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS =0V | 100 | nA | ||
| Static Drain-source On Resistance | RDS(ON) | VGS=10V, ID=20A | 14 | 21 | m | |
| RDS(ON) | VGS=4.5V, ID=15A | 18 | 25 | m | ||
| Forward Transconductance | gFS | VDS =25V, ID=10A | 20 | S | ||
| Source-drain voltage | VSD | IS=20A | 1.20 | V | ||
| Capacitance Characteristics | ||||||
| Input capacitance | Ciss | VDS =25V, VGS = 0V, f = 1MHz | 1000 | pF | ||
| Output capacitance | Coss | 108.5 | pF | |||
| Reverse transfer capacitance | Crss | 96.9 | pF | |||
| Gate Charge Characteristics | ||||||
| Total gate charge | Qg | VDD =25V, ID =10A, VGS = 10V | 15 | nC | ||
| Gate-Source charge | Qgs | 4.5 | ||||
| Gate-Drain charge | Qgd | 7.5 | ||||
| Thermal Resistance | ||||||
| Thermal resistance, junction - case | RthJC | 2.8 | C/W | |||
| Thermal resistance, junction - ambient | RthJA | 55 | C/W | |||
| Soldering temperature, wavesoldering for 10s | Tsold | 265 | C | |||
2410121547_KUU-50N06_C2939003.pdf
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