High Current N Channel MOSFET KUU SI2306 with 30 Volt Drain Source Voltage and Low Thermal Resistance
Key Attributes
Model Number:
SI2306
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
RDS(on):
65mΩ@10V,3.5A
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
305pF@10V
Pd - Power Dissipation:
750mW
Gate Charge(Qg):
4.5nC@10V
Mfr. Part #:
SI2306
Package:
SOT-23
Product Description
Product Overview
This N-Channel 30-V(D-S) MOSFET features TrenchFET Power MOSFET technology, offering low on-state resistance (RDS(on)MAX) of 65m@10V and 85m@4.5V, with a continuous drain current (ID) of 4A. It is designed for applications such as load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: SI2306
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 4 | A | |||
| Pulsed Diode Current | IDM | 20 | A | |||
| Continuous Source-Drain Current(Diode Conduction) | IS | 0.72 | A | |||
| Power Dissipation | PD | 0.75 | W | |||
| Thermal Resistance from Junction to Ambient (t5s) | RJA | 150 | /W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = 250A | 30 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = 250A | 1 | 3 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = 20V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = 30V, VGS =0V | 1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS = 10V, ID = 3.5A | 44 | 65 | m | |
| Drain-source on-state resistance | RDS(on) | VGS = 4.5V, ID = 2.8A | 58 | 85 | m | |
| Forward transconductance | gfs | VDS = 4.5V, ID = 4A | 7 | S | ||
| Diode forward voltage | VSD | IS=1.25A,VGS=0V | 0.8 | 1.28 | V | |
| Input capacitance | Ciss | VDS = 10V,VGS =0V, f=1MHz | 305 | pF | ||
| Output capacitance | Coss | VDS = 10V,VGS =0V, f=1MHz | 65 | pF | ||
| Reverse transfer capacitance | Crss | VDS = 10V,VGS =0V, f=1MHz | 29 | pF | ||
| Total gate charge | Qg | VDS = 10V,VGS = 4.5V, ID = 4A | 3 | 4.5 | nC | |
| Gate-source charge | Qgs | VDS = 10V,VGS = 4.5V, ID = 4A | 1.6 | nC | ||
| Gate-drain charge | Qg d | VDS = 10V,VGS = 4.5V, ID = 4A | 0.6 | nC | ||
| Gate resistance | Rg | f=1MHz | 5 | |||
| Turn-on delay time | td(on) | VDD= 10V RL=10, ID 1A, VGEN= 4.5V,Rg=6 | 7 | 11 | ns | |
| Rise time | tr | VDD= 10V RL=10, ID 1A, VGEN= 4.5V,Rg=6 | 12 | 18 | ns | |
| Turn-off delay time | td(off) | VDD= 10V RL=10, ID 1A, VGEN= 4.5V,Rg=6 | 14 | 25 | ns | |
| Fall time | tf | VDD= 10V RL=10, ID 1A, VGEN= 4.5V,Rg=6 | 6 | 10 | ns | |
| Continuous Source-Drain Diode Current | IS | Tc=25 | 1.2 | A | ||
| Pulsed Diode forward Current | ISM | 20 | A |
2410121853_KUU-SI2306_C7461728.pdf
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