Low on resistance N channel MOSFET KUU 2SK3018W with fast switching speeds and easy drive circuit design

Key Attributes
Model Number: 2SK3018W
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-
RDS(on):
8Ω@4V,10mA
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
13pF@10V
Pd - Power Dissipation:
200mW
Mfr. Part #:
2SK3018W
Package:
SOT-323
Product Description

Product Overview

This N-channel MOSFET offers low on-resistance and fast switching speeds, making it ideal for portable equipment due to its low voltage drive capability. It features easily designed drive circuits and is suitable for parallel configurations.

Product Attributes

  • Marking: KN
  • Type: Plastic-Encapsulated MOSFET

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnits
Maximum RatingsVDS30V
VGSS±20V
ID0.1A
PD0.2W
TJ150°C
Tstg-55150°C
RθJA625°/W
Electrical CharacteristicsV(BR)DSSVGS = 0V, ID = 10µA30V
IDSSVDS =30V,VGS = 0V0.2µA
IGSSVGS =±20V, VDS = 0V±2uA
VGS(th)VDS =3V, ID =100µA0.81.5V
RDS(on)VGS = 4V, ID =10mA8Ω
RDS(on)VGS =2.5V,ID =1mA13Ω
gFSVDS =3V, ID =10mA20mS
Dynamic CharacteristicsCissVDS =5V,VGS =0V,f =1MHz13pF
Coss9pF
Crss4pF
Switching Characteristicstd(on)VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω15ns
tr35ns
td(off)80ns
tf80ns

2409302200_KUU-2SK3018W_C5381405.pdf

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