High Density Cell P Channel MOSFET KUU AO4407A for Power Management and Load Switching Applications
Key Attributes
Model Number:
AO4407A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-
RDS(on):
17mΩ@6V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
300pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.8nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
AO4407A
Package:
SOP-8
Product Description
Product Overview
-30V/-12A P-Channel MOSFET featuring Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). Ideal for high-speed switching applications such as battery protection, power management, and load switching.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VGS=0VID=-250A | -30 | -- | -- | V |
| VDS=-30VVGS=0V | -- | -- | -1 | uA | |
| VGS=0VID=-250A | -30 | -- | -- | V | |
| Gate-Body Leakage Current | VGS=20VVDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VDS=VGSID=-250A | -1 | -1.5 | -2.2 | V |
| VGS=-20V ID=-12A | -- | 8.5 | 11 | m | |
| VGS=-10V ID=-12A | -- | 10 | 13 | m | |
| Drain-Source On-State Resistance | VGS=-6VID=-7A | -- | 12.5 | 17 | m |
| Input Capacitance | VDS=-15VVGS=0V f=1MHz | -- | 2800 | -- | pF |
| Output Capacitance | VDS=-15VVGS=0V f=1MHz | -- | 350 | -- | pF |
| Reverse Transfer Capacitance | VDS=-15VVGS=0V f=1MHz | -- | 300 | -- | pF |
| Total Gate Charge | VDD=-15VID=-15A VGS=-10V | -- | 30 | -- | nC |
| Gate Source Charge | VDD=-15VID=-15A VGS=-10V | -- | 5.5 | -- | nC |
| Gate Drain Charge | VDD=-15VID=-15A VGS=-10V | -- | 7.5 | -- | nC |
| Turn-on Delay Time | VDD=-15VID=-15A VGS=-10VRG=2.5 | -- | 13 | -- | nS |
| Turn-on Rise Time | VDD=-15VID=-15A VGS=-10VRG=2.5 | -- | 20 | -- | nS |
| Turn-Off Delay Time | VDD=-15VID=-15A VGS=-10VRG=2.5 | -- | 90 | -- | nS |
| Turn-Off Fall Time | VDD=-15VID=-15A VGS=-10VRG=2.5 | -- | 65 | -- | nS |
| Forward on voltage | Tj=25Is=-12A | -- | -- | -1.2 | V |
| Diode Continuous Forward Current | Tc=25C | -- | -12 | -- | A |
| Pulse Drain Current | Tc=25C | -- | -- | -60 | A |
| Tested Continuous Drain Current | Tc=25C | -- | -12 | -- | A |
| Maximum Power Dissipation | Mounted on Large Heat Sink | -- | -- | 3 | W |
| Thermal Resistance Junction-Ambient | (1 in2 Pad of 2-oz Copper) | -- | 40 | -- | C/W |
| Gate-Source Voltage | Common Ratings | -- | -- | 20 | V |
| Maximum Junction Temperature | Common Ratings | -- | -- | 150 | C |
| Storage Temperature Range | Common Ratings | -50 | -- | 155 | C |
2410161003_KUU-AO4407A_C41432291.pdf
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