molded plastic silicon bridge rectifier LGE DF10M rated at 1000V peak reverse voltage and 30A surge
Key Attributes
Model Number:
DF10M
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.1V@1A
Current - Rectified:
1A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
DF10M
Package:
DIP-4
Product Description
Product Overview
The DF005M-DF10M series are silicon bridge rectifiers designed for printed circuit board applications. They offer ratings up to 1000V PRVP and surge overload capabilities to 30 Amperes peak. Constructed using a molded plastic technique with glass passivated chip junctions, these rectifiers provide reliable, low-cost performance and are lead solderable per MIL-STD-202 method 208. The plastic material complies with UL flammability classification 94V-O.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Molded plastic, Glass passivated chip junctions
- Color: Not specified
- Certifications: UL flammability classification 94V-O
Technical Specifications
| Characteristic | Symbol | DF005M | DF01M | DF02M | DF04M | DF06M | D08M | DF10M | Units |
| Peak Repetitive Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| RMS Reverse Voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| DC Blocking Voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward Output current @TA=40 | IF(AV) | 1.0 | A | ||||||
| Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load | IFSM | 30 | A | ||||||
| Operating junction temperature range | TJ | - 55 ---- + 150 | |||||||
| Storage temperature range | TSTG | - 55 ---- + 150 | |||||||
| Maximum instantaneous forward voltage at 1.0 A | VF | 1.1 | V | ||||||
| Maximum reverse current @TA=25 at rated DC blocking voltage | IR | 5.0 | A | ||||||
| Maximum reverse current @TA=100 | IR | 0.5 | mA | ||||||
| Current squared time t < 8.3ms , Ta = 25 | It | 3.74 | As | ||||||
| Typical thermal resistance junction to lead On aluminum substrate | RJL | 66 | /W | ||||||
| Typical thermal resistance junction to ambient | RJA | 28 | /W | ||||||
| Typical thermal resistance junction to case | RJC | 27 | /W | ||||||
2410121929_LGE-DF10M_C22388888.pdf
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