N Channel Enhancement Mode MOSFET KUU BSS123 Suitable for Amplification and Switching Circuits
Key Attributes
Model Number:
BSS123
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
150mA
RDS(on):
6Ω@10V,120mA
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
2.8V@1mA
Type:
N-Channel
Number:
1 N-channel
Input Capacitance(Ciss):
40pF@25V
Pd - Power Dissipation:
250mW
Mfr. Part #:
BSS123
Package:
SOT-23
Product Description
Product Overview
N-Channel Enhancement-Mode MOS FETs designed for general-purpose applications. These transistors offer reliable performance with specified maximum ratings for drain-source voltage, gate-source voltage, and continuous/pulsed drain current. They are suitable for various electronic circuits requiring efficient switching and amplification.
Product Attributes
- Device Marking: BSS123=SA
- Part Number: BSS123
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | BVDSS | 100 | V | |||
| Gate-Source Voltage | VGS | +20 | V | |||
| Drain Current-continuous | IDR | 150 | mA | |||
| Drain Current-pulsed | IDRM | 600 | mA | |||
| THERMAL CHARACTERISTICS | ||||||
| Total Device Dissipation | PD | 250 | mW | TA=25 | ||
| Derate above 25 | 1.8 | mW/ | ||||
| Thermal Resistance Junction to Ambient | RJA | 500 | /W | |||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | |||
| ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID=10uA,VGS=0V | ||
| Gate Threshold Voltage | VGS(th) | 1.0 | 2.8 | V | ID=1mA,VGS=VDS | |
| Diode Forward Voltage Drop | VSD | 1.5 | V | ISD=200mA,VGS=0V | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | nA | VGS=0V, VDS=60V | ||
| Gate Body Leakage | IGSS | +100 | nA | VGS=+20V, VDS=0V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 3.5 | 6 | ID=120mA,VGS=10V | ||
| Input Capacitance | CISS | 40 | pF | VGS=0V, VDS=25V,f=1MHz | ||
| Common Source Output Capacitance | COSS | 25 | pF | VGS=0V, VDS=25V,f=1MHz | ||
| Turn-ON Time | t(on) | 10 | ns | VDS=50V, ID=200mA, RGEN=25 | ||
| Turn-OFF Time | t(off) | 20 | ns | VDS=50V, ID=200mA, RGEN=25 | ||
2410121519_KUU-BSS123_C5119541.pdf
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