Trench Power LV Technology N Channel MOSFET KUU KM3134 for Load Switching and Logic Level Applications
Key Attributes
Model Number:
KM3134
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-50℃~+150℃
RDS(on):
800mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
21pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
33pF
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
KM3134
Package:
SOT-23
Product Description
Product Overview
The KM3134 is an N-Channel MOSFET featuring Trench Power LV MOSFET technology, designed for high power and current handling capabilities. It is suitable for applications such as load/power switching, interfacing switching, and logic level shifting, offering efficient performance with low on-state resistance.
Product Attributes
- Device Code: 34K
- Brand: Yongyutai
- Model: KM3134
- Type: N-Channel MOSFET
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BV(BR)DSS | VGS=0VID=250A | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20VVGS=0V | -- | -- | 1 | uA |
| Gate-Body Leakage Current | IGSS | VGS=12VVDS=0V | -- | -- | 20 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGSID=250A | 0.35 | 0.7 | 1.1 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5VID=0.65A | -- | 100 | 350 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS=2.5VID=0.55A | -- | 135 | 400 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS=1.8VID=0.45A | -- | 200 | 800 | m |
| Input Capacitance | CISS | VDS=10VID=0.5AVGS=4.5Vf=1MHz | -- | 33 | -- | pF |
| Output Capacitance | COSS | VDS=10VID=0.5AVGS=4.5Vf=1MHz | -- | 21 | -- | pF |
| Reverse Transfer Capacitance | CRSS | VDS=10VID=0.5AVGS=4.5Vf=1MHz | -- | 10 | -- | pF |
| Total Gate Charge | Qg | VDD=10VID=0.5AVGS=4.5VRG=10 | -- | 0.8 | -- | nC |
| Gate Source Charge | Qgs | VDD=10VID=0.5AVGS=4.5VRG=10 | -- | 0.3 | -- | nC |
| Gate Drain Charge | Qgd | VDD=10VID=0.5AVGS=4.5VRG=10 | -- | 0.17 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=10VID=0.5AVGS=4.5VRG=10 | -- | 4.2 | -- | nS |
| Turn-on Rise Time | tr | VDD=10VID=0.5AVGS=4.5VRG=10 | -- | 19.1 | -- | nS |
| Turn-Off Delay Time | td(off) | VDD=10VID=0.5AVGS=4.5VRG=10 | -- | 10.3 | -- | nS |
| Turn-Off Fall Time | tf | VDD=10VID=0.5AVGS=4.5VRG=10 | -- | 24 | -- | nS |
| Forward on voltage | VSD | Tj=25Is=0.5A | -- | -- | 1.2 | V |
| Drain-Source Breakdown Voltage | VDS | -- | 20 | -- | -- | V |
| Gate-Source Voltage | VGS | -- | -- | -- | 12 | V |
| Maximum Junction Temperature | TJ | -- | -- | -- | 150 | C |
| Storage Temperature Range | TSTG | -- | -50 | -- | 155 | C |
| Diode Continuous Forward Current | IS | Tc=25C | -- | 0.35 | -- | A |
| Pulse Drain Current | IDM | Tc=25C | -- | 1.8 | -- | A |
| Tested Continuous Drain Current | ID | Tc=25C | -- | 0.75 | -- | A |
| Maximum Power Dissipation | PD | Mounted on Large Heat Sink Tc=25C | -- | -- | 0.75 | W |
| Thermal Resistance Junction-to-Ambient | RJA | @ Steady State TA=25 | -- | 357 | -- | C/W |
2411121110_KUU-KM3134_C41365418.pdf
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