Automotive Grade MOSFET KUU K2N7002W-7-F with RoHS Compliance Halogen Free and 1000V ESD Protection

Key Attributes
Model Number: K2N7002W-7-F
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
RDS(on):
7.5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
225mW
Mfr. Part #:
K2N7002W-7-F
Package:
SOT-323
Product Description

Product Overview

This product offers RoHS and Halogen Free compliance, making it suitable for environmentally conscious applications. The 'S-' prefix designates suitability for automotive and other applications with stringent site and control change requirements, including AEC-Q101 qualification and PPAP capability. It also features 1000V ESD protection.

Product Attributes

  • Compliance: RoHS, Halogen Free
  • Special Designation: S- prefix for automotive and unique control change requirements
  • Certifications: AEC-Q101 qualified, PPAP capable
  • ESD Protection: 1000V

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitNotes
MAXIMUM RATINGS
Continuous TC = 25C
Continuous TC = 100C
Pulsed (Note 1)
GateSource Voltage ContinuousVGS20V
DrainGate Voltage (RGS = 1.0 M)VDGR60V
DrainSource VoltageVDSS60V
Drain CurrentID225mA
Nonrepetitive (tp50s)IDM1.8A
GateSource Voltage PulsedVGSM40V
Source Current Continuous (Body Diode)IS115mA
Source Current Pulsed (Body Diode)ISM5.0A
THERMAL CHARACTERISTICS
Total Device Dissipation, FR5 Board (Note 2) @ TA = 25CPD225mW
Derate above 25C1.8mW/C
Thermal Resistance, JunctiontoAmbient(Note 2)RJA556C/W
Junction and Storage temperatureTJ,Tstg-55+150C
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 10A)VBRDSS60V
Zero Gate Voltage Drain Current TJ = 25C (VGS = 0, VDS = 60 V)IDSS1.0A
Zero Gate Voltage Drain Current TJ = 125C (VGS = 0, VDS = 60 V)IDSS10A
GateBody Leakage Current, Forward (VGS = 20 V)IGSSF1.0A
GateBody Leakage Current, Reverse (VGS = - 20 V)IGSSR-1.0A
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (VDS = VGS, ID = 250A)VGS(th)1.0V
OnState Drain Current (VDS 2.0 VDS(on), VGS = 10 V)ID(on)500mA
Static DrainSource OnState Voltage (VGS = 10 V, ID = 500 mA)VDS(on)0.375V
Static DrainSource OnState Voltage (VGS = 5.0 V, ID = 50 mA)VDS(on)1.0V
Static DrainSource OnState Resistance (VGS = 10 V, ID = 500 mA) TC = 25CRDS(on)1.6Ohms
Static DrainSource OnState Resistance (VGS = 10 V, ID = 500 mA) TC = 125CRDS(on)2.5Ohms
Static DrainSource OnState Resistance (VGS = 5.0 V, ID = 50 mA) TC = 25CRDS(on)7.5Ohms
Static DrainSource OnState Resistance (VGS = 5.0 V, ID = 50 mA) TC = 125CRDS(on)13.5Ohms
Forward Transconductance (VDS 2.0 VDS(on), ID = 200 mA)gfs17mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz)Ciss500pF
Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz)Coss13.5pF
Reverse Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz)Crss7.5pF
SWITCHING CHARACTERISTICS
TurnOn Delay Time (VDD = 25 V , ID =500 mA, RG = 25,RL = 50 ,Vgen = 10 V)td(on)11ns
TurnOff Delay Timetd(off)40ns
BODYDRAIN DIODE RATINGS
Diode Forward OnVoltage (IS = 115 mA, VGS = 0 V)VSD1.5V
DEVICE MARKING AND ORDERING INFORMATION
Marking6CK2N7002W-7-F
Ordering InformationK2N7002W-7-F
PackageSOT-323
Notes
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2. FR5 = 1.00.750.062 in.
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

2410121617_KUU-K2N7002W-7-F_C2891696.pdf

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