Automotive Grade MOSFET KUU K2N7002W-7-F with RoHS Compliance Halogen Free and 1000V ESD Protection
Product Overview
This product offers RoHS and Halogen Free compliance, making it suitable for environmentally conscious applications. The 'S-' prefix designates suitability for automotive and other applications with stringent site and control change requirements, including AEC-Q101 qualification and PPAP capability. It also features 1000V ESD protection.
Product Attributes
- Compliance: RoHS, Halogen Free
- Special Designation: S- prefix for automotive and unique control change requirements
- Certifications: AEC-Q101 qualified, PPAP capable
- ESD Protection: 1000V
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
| MAXIMUM RATINGS | ||||||
| Continuous TC = 25C | ||||||
| Continuous TC = 100C | ||||||
| Pulsed (Note 1) | ||||||
| GateSource Voltage Continuous | VGS | 20 | V | |||
| DrainGate Voltage (RGS = 1.0 M) | VDGR | 60 | V | |||
| DrainSource Voltage | VDSS | 60 | V | |||
| Drain Current | ID | 225 | mA | |||
| Nonrepetitive (tp50s) | IDM | 1.8 | A | |||
| GateSource Voltage Pulsed | VGSM | 40 | V | |||
| Source Current Continuous (Body Diode) | IS | 115 | mA | |||
| Source Current Pulsed (Body Diode) | ISM | 5.0 | A | |||
| THERMAL CHARACTERISTICS | ||||||
| Total Device Dissipation, FR5 Board (Note 2) @ TA = 25C | PD | 225 | mW | |||
| Derate above 25C | 1.8 | mW/C | ||||
| Thermal Resistance, JunctiontoAmbient(Note 2) | RJA | 556 | C/W | |||
| Junction and Storage temperature | TJ,Tstg | -55 | +150 | C | ||
| OFF CHARACTERISTICS | ||||||
| DrainSource Breakdown Voltage (VGS = 0, ID = 10A) | VBRDSS | 60 | V | |||
| Zero Gate Voltage Drain Current TJ = 25C (VGS = 0, VDS = 60 V) | IDSS | 1.0 | A | |||
| Zero Gate Voltage Drain Current TJ = 125C (VGS = 0, VDS = 60 V) | IDSS | 10 | A | |||
| GateBody Leakage Current, Forward (VGS = 20 V) | IGSSF | 1.0 | A | |||
| GateBody Leakage Current, Reverse (VGS = - 20 V) | IGSSR | -1.0 | A | |||
| ON CHARACTERISTICS (Note 3) | ||||||
| Gate Threshold Voltage (VDS = VGS, ID = 250A) | VGS(th) | 1.0 | V | |||
| OnState Drain Current (VDS 2.0 VDS(on), VGS = 10 V) | ID(on) | 500 | mA | |||
| Static DrainSource OnState Voltage (VGS = 10 V, ID = 500 mA) | VDS(on) | 0.375 | V | |||
| Static DrainSource OnState Voltage (VGS = 5.0 V, ID = 50 mA) | VDS(on) | 1.0 | V | |||
| Static DrainSource OnState Resistance (VGS = 10 V, ID = 500 mA) TC = 25C | RDS(on) | 1.6 | Ohms | |||
| Static DrainSource OnState Resistance (VGS = 10 V, ID = 500 mA) TC = 125C | RDS(on) | 2.5 | Ohms | |||
| Static DrainSource OnState Resistance (VGS = 5.0 V, ID = 50 mA) TC = 25C | RDS(on) | 7.5 | Ohms | |||
| Static DrainSource OnState Resistance (VGS = 5.0 V, ID = 50 mA) TC = 125C | RDS(on) | 13.5 | Ohms | |||
| Forward Transconductance (VDS 2.0 VDS(on), ID = 200 mA) | gfs | 17 | mmhos | |||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) | Ciss | 500 | pF | |||
| Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) | Coss | 13.5 | pF | |||
| Reverse Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) | Crss | 7.5 | pF | |||
| SWITCHING CHARACTERISTICS | ||||||
| TurnOn Delay Time (VDD = 25 V , ID =500 mA, RG = 25,RL = 50 ,Vgen = 10 V) | td(on) | 11 | ns | |||
| TurnOff Delay Time | td(off) | 40 | ns | |||
| BODYDRAIN DIODE RATINGS | ||||||
| Diode Forward OnVoltage (IS = 115 mA, VGS = 0 V) | VSD | 1.5 | V | |||
| DEVICE MARKING AND ORDERING INFORMATION | ||||||
| Marking | 6C | K2N7002W-7-F | ||||
| Ordering Information | K2N7002W-7-F | |||||
| Package | SOT-323 | |||||
| Notes | ||||||
| 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. | ||||||
| 2. FR5 = 1.00.750.062 in. | ||||||
| 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. | ||||||
2410121617_KUU-K2N7002W-7-F_C2891696.pdf
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