Durable TRIAC KY BTB16-800BW with 16 Amp RMS On State Current and 800 Volt Peak Off State Voltage
Key Attributes
Model Number:
BTB16-800BW
Product Custom Attributes
Holding Current (Ih):
50mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
180A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BTB16-800BW
Package:
TO-263
Product Description
BTA/BTB16 Series TRIACs
The BTA/BTB16 Series TRIACs from ShenZhenHanKingyuan Electronic CO.,Ltd are high-performance semiconductor devices designed for AC power control applications. Available in 3 and 4 quadrant configurations, these TRIACs offer robust performance with an RMS on-state current of 16A and repetitive peak off-state voltages up to 1000V. They are suitable for a wide range of applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
- Product Series: BTA/BTB16 Series
- Type: TRIACs
- Quadrants: 3 Quadrants, 4 Quadrants
- Packaging Options: TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263, TO-220C (Non-Insulated)
- Trademark: KY logo is a registered trademark of Shenzhen HanKingyuan Electronic
Technical Specifications
| Parameter | Conditions | BTA16/BTB16-800 | BTA16/BTB16-1200 | Unit |
|---|---|---|---|---|
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 800 | 1000 | V | |
| R.M.S On-State Current (IT(RMS)) | Tc=110C | 16 | 16 | A |
| Surge On-State Current (ITSM) | 170/180 | 170/180 | A | |
| It for fusing | Tp=10ms | 116 | 116 | As |
| Average Gate Power Dissipation (PG(AV)) | Tj=125C | 1 | 1 | W |
| Peak Gate Current (IGM) | tp=20us, Tj=125C | 4 | 4 | A |
| Operating Junction Temperature (Tj) | -40~125 | -40~125 | C | |
| Storage Temperature (TSTG) | -40~150 | -40~150 | C |
| Parameter | Test Conditions | Value (3 Quadrants) | Value (4 Quadrants) | Unit |
|---|---|---|---|---|
| Repetitive Peak Off-State Current (IDRM) | Tj=25C | 5 | 5 | uA |
| Repetitive Peak Off-State Current (IDRM) | Tc=125C | 1 | 1 | mA |
| Repetitive Peak Reverse Current (IRRM) | Tc=25C | 5 | 5 | uA |
| Repetitive Peak Reverse Current (IRRM) | Tc=125C | 1 | 1 | mA |
| Forward "on" voltage (VTM) | IT=23A, tp=380us | 1.5 | 1.5 | V |
| Gate trigger voltage (VGT) | VD=12V, RL=30 | 1.5 | 1.5 | V |
| Critical rate of rise of on-state current (di/dt) | I,II,III, F=100Hz, IG=2xIGT, tr100ns | 50 | 50 | A/us |
| Critical rate of rise of on-state current (di/dt) | IV, F=100Hz, IG=2xIGT, tr100ns | 10 | 10 | A/us |
| Gate trigger current (IGT) | I,II,III, VD=12V, RL=30 | 10 / 25 / 50 | 10 / 25 / 50 | mA |
| Gate trigger current (IGT) | IV, VD=12V, RL=30 | 50 / 100 | 50 / 100 | mA |
| Holding current (IH) | IT=0.2A | 25 / 35 / 50 | 25 / 35 / 50 | mA |
| Gate non-trigger voltage (VGD) | VD=VDRM, TJ=125C, RL=3.3K | 0.2 | 0.2 | V |
| Critical-rate of rise of commutation voltage (dv/dt) | TJ=125C, VD=2/3VDRM, Gate | 100 / 400 / 1000 | 200 / 400 | V/us |
2511102004_KY-BTB16-800BW_C5366675.pdf
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