Power Switching Device LGE AO3400 N Channel MOSFET with Low Gate Charge and High Current Capability

Key Attributes
Model Number: AO3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@10V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 N-channel
Output Capacitance(Coss):
99pF
Input Capacitance(Ciss):
623pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
9.5nC@4.5V
Mfr. Part #:
AO3400
Package:
SOT-23
Product Description

Product Overview

The 3400 is an N-Channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It is designed for operation with gate voltages as low as 2.5V, making it suitable for battery protection and other switching applications. Key features include high power and current handling capability, and it is a lead-free product.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Lead free product acquired

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Off CharacteristicsBVDSSVGS=0V, ID=250A3033-V
IDSSVDS=30V,VGS=0V--1A
IGSSVGS=12V,VDS=0V--100nA
On CharacteristicsVGS(th)VDS=VGS,ID=250A0.70.91.4V
RDS(ON)VGS=2.5V, ID=4A-4550m
RDS(ON)VGS=4.5V, ID=2.9A-3140m
RDS(ON)VGS=10V, ID=2.9A-2835m
Dynamic CharacteristicsClss--623-PF
Coss--99-PF
CrssVDS=15V,VGS=0V, F=1.0MHz-77-PF
Switching Characteristicstd(on)VDD=15V,ID=2.9A, VGS=10V,RGEN=3-3.3-nS
tr-4.8-nS
td(off)-26-nS
tf-4-nS
Total Gate ChargeQgVDS=15V,ID=5.8A, VGS=4.5V-9.5-nC
Qgs-1.5-nC
Qgd-3-nC
Drain-Source Diode CharacteristicsVSDVGS=0V,IS=2.9A-0.751.2V
IS--2.9-A
Absolute Maximum RatingsVDS--30-V
VGS--12-V
ID--5.8-A
IDM--30-A
PD--1.4-W
TJ,TSTG--55-150
Thermal CharacteristicRJANote 2-1.0-/W

2410121456_LGE-AO3400_C841146.pdf

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