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quality Triac KY BT136 800E 4A RMS On State Current and 800V Peak Off State Voltage for Motor Speed Regulation factory
quality Triac KY BT136 800E 4A RMS On State Current and 800V Peak Off State Voltage for Motor Speed Regulation factory

Triac KY BT136 800E 4A RMS On State Current and 800V Peak Off State Voltage for Motor Speed Regulation

Key Attributes
Model Number: BT136-800E
Product Custom Attributes
Holding Current (Ih):
25mA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
27A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BT136-800E
Package:
TO-220
Product Description

ShenZhenHanKingyuan Electronic BT136 Series 4A TRIACs

The BT136 Series TRIACs from ShenZhenHanKingyuan Electronic are 4-quadrant TRIACs designed for AC power control applications. They offer a high repetitive peak off-state voltage of up to 800V and an RMS on-state current of 4A. These TRIACs are suitable for various applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

  • Brand: ShenZhenHanKingyuan Electronic
  • Product Series: BT136 Series
  • Origin: Shenzhen, China
  • Trademark: KY logo is a registered trademark

Technical Specifications

A /us A /us V/us
Symbol Parameter Conditions BT136-600 BT136-800 Unit
VDRM Repetitive Peak Off-State Voltage - 600 800 V
IT(RMS) R.M.S On-State Current Tc=110C 4 A
ITSM Surge On-State Current - 25/27 A
It It for fusing Tp=10ms 3.1 As
PG(AV) Average Gate Power Dissipation Tj=125C 1 W
IGM Peak Gate Current tp=20us Tj=125C 2 A
Tj Operating Junction Temperature - -40~125 C
TSTG Storage Temperature - -40~150 C
IDRM Repetitive Peak Off-State Current Tj=25C 10 uA
IDRM Repetitive Peak Off-State Current Tj=125C 0.5 mA
IRRM Repetitive Peak Reverse Current Tj=25C 10 uA
IRRM Repetitive Peak Reverse Current Tj=125C 0.5 mA
VTM Forward "on" voltage IT=5A tp=380us 1.7 V
VGD Gate non-trigger voltage VD=12V, Tj=125C 0.2 V
IH Holding current IT=100mA 10 mA
VGT Gate trigger voltage VD=12V 1.5 V
IGT Gate trigger current I,II,III VD=12V,IGT=0.1A 5 mA
IGT Gate trigger current IV VD=12V,IGT=0.1A 10 mA
di/dt Critical-rate-of-rise of commutation current. I,II,III IT=6A ,IGT==0.2A, dIg/dt=0.2A/us 50
di/dt Critical-rate-of-rise of commutation current. IV 10
dv/dt Critical-rate-of-rise of commutation voltage TJ=125C VD=2/3VDRM Gate tp=10ms 5

2409271703_KY-BT136-800E_C2831690.pdf

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