12A RMS On State Current Standard SCRs KY TYN612 Series Suitable for Massagers and Motor Speed Control

Key Attributes
Model Number: TYN612
Product Custom Attributes
Holding Current (Ih):
30mA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
800V
SCR Type:
1 SCR
Gate Trigger Voltage (Vgt):
1V
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
TYN612
Package:
TO-220
Product Description

ShenZhenHanKingyuan Electronic TYN612 Series 12A SCRs - Standard SCRs

The TYN612 Series from ShenZhenHanKingyuan Electronic are standard SCRs designed for various AC power control applications. These sensitive gate SCRs offer reliable performance with key features like a 12A RMS on-state current and a low gate trigger voltage of 1.5V. Available in multiple package types including TO-220B (Non-Insulated), TO-263, TO-252, and TO-251, they are suitable for applications such as washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

  • Brand: ShenZhenHanKingyuan Electronic
  • Product Series: TYN612 Series
  • Product Type: Standard SCRs
  • Origin: Shenzhen
  • Trademark: KY logo (registered)

Technical Specifications

ParameterConditionsValueUnit
Repetitive Peak Off-State Voltage (VDRM/VRRM)TYN612600/800V
R.M.S On-State Current (IT(RMS))Tc=105C12A
On-state average current (IT(AV))TC=105C7.5A
Surge On-State Current (ITSM)Tp=10ms/tp=8.3ms120/132A
It for fusingTp=10ms75As
Peak Gate Power Dissipation (PGM)Tj=125C2W
Average Gate Power Dissipation (PG(AV))Tj=125C0.5W
Operating Junction Temperature (Tj)-40~125C
Storage Temperature (TSTG)-40~150C
Repetitive Peak Off-State Current (IDRM)Tc=25C10uA
Repetitive Peak Off-State Current (IDRM)Tc=125C1mA
Repetitive Peak Reverse Current (IRRM)Tc=25C10uA
Repetitive Peak Reverse Current (IRRM)Tc=125C1mA
Forward "on" voltage (VTM)IT=23A, tp=380us1.7V
Gate trigger voltage (VGT)VD=12V, IT=0.1A1.0V
Critical rate of rise of on-state current (di/dt)Tj=125C, IG=2xIGT, tr100ns50A/us
Gate trigger current (IGT)VD=12V, IT=0.1A20mA
Latching current (IL)IG=1.2IGT40mA
Holding current (IH)IT=0.1A30mA
Gate non-trigger voltage (VGD)VD=VDRM, TJ=125C,RL=3.3K,RGK=1K0.25V
Critical-rate of rise of commutation voltage (dv/dt)TJ=125C, VD=2/3VDRM, Gate open circuit200V/us
Thermal resistance Junction to case (Rth(j-c))1C/W
Thermal resistance Junction to ambient (Rth(j-a))50C/W

2410121321_KY-TYN612_C2831681.pdf

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