load switching solution LGE LGE2301 P Channel 20 Volt MOSFET with low gate charge and SOT 23 package
Key Attributes
Model Number:
LGE2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
RDS(on):
-
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Input Capacitance(Ciss):
405pF@10V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
12nC
Mfr. Part #:
LGE2301
Package:
SOT-23
Product Description
Product Overview
The LGE2301 is a P-Channel 20-V (D-S) MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is well-suited for applications such as load switching and Pulse Width Modulation (PWM).
Product Attributes
- Brand: LGE
- Product Type: P-Channel 20-V (D-S) MOSFET
- Technology: Advanced Trench
- Certifications: Lead-free product acquired
- Package: SOT-23
- Origin: http://www.lgesemi.com
- Contact: mail:lge@lgesemi.com
- Revision: 20170701-P1
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current - Continuous | ID | -3 | A | |||
| Drain Current - Pulsed (Note 1) | IDM | -10 | A | |||
| Maximum Power Dissipation | PD | 1 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RJA | 125 | /W | |||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -20 | -24 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V,VGS=0V | -1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | ±100 | nA | ||
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -0.4 | -0.7 | -1 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-3A | 64 | 110 | mΩ | |
| VGS=-2.5V, ID=-2A | 89 | 140 | mΩ | |||
| Forward Transconductance | gFS | VDS=-5V,ID=-2.8A | 9.5 | S | ||
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | 405 | PF | |||
| Output Capacitance | Coss | 75 | PF | |||
| Reverse Transfer Capacitance | Crss | VDS=-10V,VGS=0V, F=1.0MHz | 55 | PF | ||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=-10V,ID=-1A, VGS=-4.5V,RGEN=10Ω | 11 | nS | ||
| Turn-on Rise Time | tr | 35 | nS | |||
| Turn-Off Delay Time | td(off) | 30 | nS | |||
| Turn-Off Fall Time | tf | 10 | nS | |||
| Total Gate Charge | Qg | 3.3 | 12 | nC | ||
| Gate-Source Charge | Qgs | 0.7 | nC | |||
| Gate-Drain Charge | Qg d | VDS=-10V,ID=-3A, VGS=-2.5V | 1.3 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=1.3A | -1.2 | V | ||
| Diode Forward Current (Note 2) | IS | -1.3 | A | |||
2410010201_LGE-LGE2301_C5455761.pdf
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