SOT23 NMOSFET transistor LGE BSS138 suitable for logic level switching and battery operated systems
Key Attributes
Model Number:
BSS138
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
220mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
6Ω@4.5V,0.22A
Gate Threshold Voltage (Vgs(th)):
800mV
Reverse Transfer Capacitance (Crss@Vds):
6pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
27pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
BSS138
Package:
SOT-23
Product Description
Product Overview
The BSS138 is a SOT-23 plastic-encapsulated NMOSFET designed with a high-density cell for extremely low RDS(on). It is rugged and reliable, suitable for direct logic-level interface with TTL/CMOS drivers, battery-operated systems, and solid-state relays. Applications include driving relays, solenoids, lamps, hammers, displays, memories, and transistors.
Product Attributes
- Brand: LGE Semiconductor (implied by URL and email)
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 50 | V | |||
| Continuous Gate-Source Voltage | VGSS | ±20 | V | |||
| Continuous Drain Current | ID | 0.22 | A | |||
| Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance from Junction to Ambient | RΘJA | 357 | ℃/W | |||
| Operating Temperature | Tj | 150 | ℃ | |||
| Storage Temperature | Tstg | -55 | ~+150 | ℃ | ||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 50 | V | ||
| Gate-body leakage | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =50V, VGS =0V | 0.5 | µA | ||
| VDS =30V, VGS =0V | 100 | nA | ||||
| On Characteristics | ||||||
| Gate-threshold voltage (note 1) | VGS(th) | VDS =VGS, ID =1mA | 0.80 | 1.50 | V | |
| Static drain-source on-resistance (note 1) | RDS(on) | VGS =10V, ID =0.22A | 3.50 | Ω | ||
| VGS =4.5V, ID =0.22A | 6 | Ω | ||||
| Forward transconductance (note 1) | gFS | VDS =10V, ID =0.22A | 0.12 | S | ||
| Dynamic Characteristics (note 2) | ||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f=1MHz | 27 | pF | ||
| Output capacitance | Coss | 13 | ||||
| Reverse transfer capacitance | Crss | 6 | ||||
| Switching Characteristics (note 1,2) | ||||||
| Turn-on delay time | td(on) | VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω | 5 | ns | ||
| Rise time | tr | 18 | ||||
| Turn-off delay time | td(off) | 36 | ||||
| Fall time | tf | 14 | ||||
| Drain-source body diode characteristics (note 1) | ||||||
| Body diode forward voltage | VSD | IS=0.44A, VGS = 0V | 1.4 | V | ||
2410121721_LGE-BSS138_C713688.pdf
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