High voltage intelligent power module LINKOSEMI LKS1D5005C designed for control of BLDC and PMSM motors
Key Attributes
Model Number:
LKS1D5005C
Product Custom Attributes
High-side Bias Voltage(Vbs):
12V~18V
Operating Temperature:
-40℃~+150℃
Frequency - Switching:
20kHz
Mfr. Part #:
LKS1D5005C
Package:
ESOP-13
Product Description
Product Overview
The LKS1D5005C is a high-voltage, single-phase Intelligent Power Module (IPM) integrating a high-voltage IC and high-performance MOSFETs. It is suitable for Brushless DC (BLDC) and Permanent Magnet Synchronous Motors (PMSM). The source of the low-side MOSFET can be used for current sampling. The input includes a Schmitt trigger and is compatible with 3.3V, 5V, and 15V logic levels. The LKS1D5005C utilizes the ESOP13 package.
Product Attributes
- Brand: LKS (from BPSemi)
- Origin: China (implied by language and manufacturer website)
- Package: ESOP13
- Packaging: Tape & Reel, 2500PCS/Reel
Technical Specifications
| Parameter | Symbol | Condition | Min | Typical | Max | Unit | Notes |
| Absolute Maximum Ratings | |||||||
| Control Supply Voltage | VCC | VCC and GND | -0.3 | 20 | V | ||
| High-Side Bias Voltage | VBS | VB and VS | -0.3 | 20 | V | ||
| Input Signal Voltage | VLIN/HIN | LIN/HIN and GND | -0.3 | VCC+0.3 | V | ||
| MOSFET Drain-Source Voltage | VDSS | IDSS=250uA | 500 | V | |||
| Continuous MOSFET Operating Current | ID | TC=25 | 5 | A | Note 2 | ||
| Continuous MOSFET Operating Current | ID | TC=100 | 3.16 | A | Note 2 | ||
| Maximum Power Dissipation | PD | Single MOSFET (TC=100) | 50 | W | |||
| Operating Junction Temperature | TJ | -40 | 150 | Note 2 | |||
| Storage Temperature | TSTG | -40 | 125 | ||||
| Recommended Operating Conditions | |||||||
| Power Supply Voltage | VPN | Between P and N pins | 300 | 400 | V | ||
| Control Supply Voltage | VCC | VCC and GND | 12.0 | 15.0 | 18.0 | V | |
| High-Side Bias Voltage | VBS | VB and VS | 12.0 | 15.0 | 18.0 | V | |
| Input Turn-On Voltage Threshold | VLIN/HIN(ON) | LIN/HIN and GND | 3.0 | VCC | V | ||
| Input Turn-Off Voltage Threshold | VLIN/HIN(OFF) | LIN/HIN and GND | 0 | 0.4 | V | ||
| Dead Time | TDEAD | VCC=VBS=12.0~18.0V, TJ<150C | 1.0 | us | Note 4 | ||
| PWM Switching Frequency | FPWM | TJ<150C | 20 | kHz | |||
| Maximum Case Temperature during Operation | TC(MAX) | TJ<150C | 120 | ||||
| Electrical Characteristics | |||||||
| MOSFET Drain-Source Breakdown Voltage | BVDSS | VLIN/HIN =0V, ID=250uA | 500 | V | |||
| MOSFET Cutoff Drain Current | IDSS | VLIN/HIN=0V, VDS=500V | 10 | A | |||
| Body Diode Forward On-Voltage | VSD | VCC=VBS=15V, VLIN/HIN=0V, ID=-5A | 1.4 | V | |||
| MOSFET On-Resistance | RDS(ON) | VCC=VBS=15V, VLIN/HIN=5V, ID=0.5A | 1.5 | 1.9 | |||
| Turn-On Time | TON | VPN=400V, VCC=VBS=15V, ID=5A, VLIN/HIN=0~5V, Inductive Load L=2.8mH | 630 | ns | High and low side MOSFETs | ||
| Turn-Off Time | TOFF | 220 | ns | High and low side MOSFETs | |||
| Quiescent VCC Supply Current | IQCC | VCC=15V, VLIN/HIN=0V | 15 | 80 | A | ||
| VCC Normal Operating Voltage Threshold | VCC_ON | 8.0 | 8.6 | 9.8 | V | ||
| VCC Undervoltage Protection Threshold | VCC_UVLO | 7.0 | 7.6 | 8.6 | V | ||
| Logic High Level Input Voltage | VIH | 2.4 | V | ||||
| Logic Low Level Input Voltage | VIL | 0.6 | V | ||||
| Built-in Dead Time | DT | Internal pre-driver | 300 | ns | |||
| Bootstrap Diode Forward Voltage | VFB | IF=0.2A | 1.4 | V | |||
2409280232_LINKOSEMI-LKS1D5005C_C22469866.pdf
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