High Current TRIAC KY BTA41-1200B 40A RMS Current 1200V Peak Off State Voltage for Power Electronics

Key Attributes
Model Number: BTA41-1200B
Product Custom Attributes
Holding Current (Ih):
-
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
40A
Peak Off - State Voltage(Vdrm):
1.2kV
Current - Surge(Itsm@f):
420A
SCR Type:
1 TRIAC
Gate Trigger Voltage (Vgt):
1.5V
Operating Temperature:
-40℃~+150℃
Mfr. Part #:
BTA41-1200B
Package:
TO-3P-3
Product Description

Product Overview

The ShenZhenHanKingyuan Electronic CO.,Ltd BTA41 Series TRIACs are designed for 3 and 4 quadrant applications, offering high current handling capabilities of up to 40A RMS. These devices are suitable for various power control applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation. Key features include a low gate trigger voltage (VGT) of 1.5V and a high repetitive peak off-state voltage (VDRM/VRRM) ranging from 800V to 1600V.

Product Attributes

  • Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
  • Product Line: BTA41 Series
  • Origin: Shenzhen
  • Trademark: KY logo (registered)

Technical Specifications

ParameterConditionsBTA41-800BBTA41-1200BBTA41-1600BUnit
Repetitive Peak Off-State Voltage (VDRM/VRRM)Tj=25C80012001600V
R.M.S On-State Current (IT(RMS))Tc=110C40A
Surge On-State Current (ITSM)Tp=10ms520A
It for fusingTp=10ms400/420As
Average Gate Power Dissipation (PG(AV))Tj=125C1W
Peak Gate Current (IGM)Tj=125C8A
Operating Junction Temperature (Tj)-40~125C
Storage Temperature (TSTG)-40~150C
Repetitive Peak Off-State Current (IDRM)Tj=25C5uA
Repetitive Peak Off-State Current (IDRM)Tc=125C5mA
Repetitive Peak Reverse Current (IRRM)Tc=25C5uA
Repetitive Peak Reverse Current (IRRM)Tc=125C5mA
Forward "on" voltage (VTM)IT=23A, tp=380us1.55V
Gate trigger voltage (VGT)VD=12V, RL=301.5V
Gate trigger current (IGT)VD=12V, RL=3050mA
Holding current (IH)IT=0.2A60mA
Gate non-trigger voltage (VGD)VD=VDRM, TJ=125C,RL=3.3K 0.2V
Critical-rate of rise of commutation voltage (dv/dt)TJ=125C, VD=2/3VDRM, Gate open circuit1500V/us

2410121246_KY-BTA41-1200B_C2831707.pdf

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