Power MOSFET 250V 80A IXFA80N25X3 N Channel with Low Gate Charge and Fast Intrinsic Diode Technology
Product Overview
The IXFA80N25X3, IXFP80N25X3, IXFQ80N25X3, and IXFH80N25X3 are high-performance N-Channel Enhancement Mode Power MOSFETs from IXYS. Featuring X3-Class HiPerFETTM technology, these devices offer low RDS(ON) and low QG, making them suitable for high-density power applications. They are avalanche rated and possess a fast intrinsic diode, ensuring reliability and efficiency in demanding switching and resonant power circuits. Their international standard packages facilitate easy mounting and space savings.
Product Attributes
- Brand: IXYS
- Product Line: X3-Class HiPerFETTM
- Material: Silicon
- Certifications: Covered by one or more U.S. patents (listed in source)
Technical Specifications
| Model | VDSS (V) | ID25 (A) | RDS(on) @ VGS=10V, ID=0.5ID25 (m) | TJ Max (C) | Package |
| IXFA80N25X3 | 250 | 80 | 16 | 150 | TO-263 AA |
| IXFP80N25X3 | 250 | 80 | 16 | 150 | TO-220AB |
| IXFQ80N25X3 | 250 | 80 | 16 | 150 | TO-3P |
| IXFH80N25X3 | 250 | 80 | 16 | 150 | TO-247 |
Key Characteristics
| Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | VGS = 0V, ID = 250A | 250 | V | ||
| VGS(th) | VDS = VGS, ID = 1.5mA | 2.5 | 4.5 | V | |
| IGSS | VGS = 20V, VDS = 0V | 100 | nA | ||
| IDSS | VDS = VDSS, VGS = 0V | 5 | A | ||
| IDSS (TJ = 125C) | VDS = VDSS, VGS = 0V | 350 | A | ||
| RDS(on) | VGS = 10V, ID = 0.5 ID25, Note 1 | 13 | 16 | m | |
| ID25 | TC = 25C | 80 | A | ||
| IDM | TC = 25C, Pulse Width Limited by TJM | 220 | A | ||
| PD | TC = 25C | 390 | W | ||
| TJ | -55 | +150 | C | ||
| TJM | 150 | C | |||
| Tstg | -55 | +150 | C | ||
| RthJC | 0.32 | C/W |
Applications
- Switch-Mode and Resonant-Mode Power Supplies
- DC-DC Converters
- PFC Circuits
- AC and DC Motor Drives
- Robotics and Servo Controls
2410121327_Littelfuse-IXFA80N25X3_C6884330.pdf
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