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quality General purpose PNP transistor LangJie MMBT3906 in SOT-23 package for versatile electronic circuits factory
quality General purpose PNP transistor LangJie MMBT3906 in SOT-23 package for versatile electronic circuits factory

General purpose PNP transistor LangJie MMBT3906 in SOT-23 package for versatile electronic circuits

Key Attributes
Model Number: MMBT3906
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3906
Package:
SOT-23
Product Description

MMBT3906 SOT-23 Plastic-Encapsulate Transistors

The MMBT3906 is a PNP transistor designed for general-purpose applications. It is complementary to the MMBT3904, offering a reliable and versatile component for various electronic circuits.

Product Attributes

  • Package: SOT-23
  • Transistor Type: PNP
  • Marking: 2A

Technical Specifications

Parameter Symbol Test Conditions Min Max Unit
Maximum Ratings
Collector-Base Voltage VCBO (TA=25 unless otherwise noted) -40 V
Collector-Emitter Voltage VCEO (TA=25 unless otherwise noted) -40 V
Emitter-Base Voltage VEBO (TA=25 unless otherwise noted) -5 V
Collector Current - Continuous IC (TA=25 unless otherwise noted) -0.2 A
Collector Dissipation PC (TA=25 unless otherwise noted) 0.2 W
Thermal Resistance Junction to Ambient RJA (TA=25 unless otherwise noted) 625 /W
Junction Temperature TJ (TA=25 unless otherwise noted) 150
Storage Temperature Tstg (TA=25 unless otherwise noted) -55 +150
Electrical Characteristics
Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE= -10A, IC=0 -5 V
Collector cut-off current ICBO VCB= -40 V, IE=0 -100 nA
Collector cut-off current ICEX VCE=-30V, VBE(off)=-3V -50 nA
Emitter cut-off current IEBO VEB= -5V, IC=0 -100 nA
DC current gain hFE1 VCE=-1V, IC= -10mA 100 300
DC current gain hFE2 VCE= -1V, IC=-50mA 60
DC current gain hFE3 VCE= -2V, IC=-100mA 30
Collector-emitter saturation voltage VCE(sat)1 IC=-50mA, IB=-5mA -0.3 V
Base-emitter saturation voltage VBE(sat) IC= -50mA, IB=-5mA -0.95 V
Transition frequency fT VCE=-20V,IC=-10mA,f=100MHz 300 MHz
Delay Time td VCC=-3V,VBE=-0.5V IC=-10mA, IB1=IB2=-1mA 35 nS
Rise Time tr VCC=-3V,VBE=-0.5V IC=-10mA, IB1=IB2=-1mA 35 nS
Storage Time ts VCC=-3V,IC=-10mA IB1=IB2=-1mA 225 nS
Fall Time tf VCC=-3V,IC=-10mA IB1=IB2=-1mA 75 nS

2410121928_LangJie-MMBT3906_C18195368.pdf

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