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quality N Channel MOSFET Leiditech SQD70140EL Featuring Low Gate Charge and Enhanced Trench Technology Design factory
quality N Channel MOSFET Leiditech SQD70140EL Featuring Low Gate Charge and Enhanced Trench Technology Design factory

N Channel MOSFET Leiditech SQD70140EL Featuring Low Gate Charge and Enhanced Trench Technology Design

Key Attributes
Model Number: SQD70140EL
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
28mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
250pF
Number:
1 N-channel
Pd - Power Dissipation:
85W
Input Capacitance(Ciss):
2nF
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
SQD70140EL
Package:
TO-252
Product Description

Product Overview

The SQD70140EL is an N-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and is capable of operating with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications.

Product Attributes

  • Brand: Leiditech
  • Product ID: SQD70140EL
  • Package Marking: SQD70140EL
  • Ordering Information: AP50N10D
  • Technology: Advanced Trench Technology
  • Channel Type: N-Channel
  • Mode: Enhancement Mode

Technical Specifications

Symbol Parameter Condition Limit Unit
General Features
VDS Drain-Source Voltage 100 V
ID Drain Current-Continuous 50 A
RDS(ON) Drain-Source On-State Resistance VGS=10V < 28 m
Absolute Maximum Ratings (TC=25 unless otherwise noted)
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous 50 A
ID (100) Drain Current-Continuous(TC=100) 21 A
IDM Pulsed Drain Current 70 A
PD Maximum Power Dissipation 85 W
Derating factor 0.57 W/
EAS Single pulse avalanche energy (Note 5) 256 mJ
TJ,TSTG Operating Junction and Storage Temperature Range -55 To 175
RJC Thermal Resistance, Junction-to-Case (Note 2) 1.8 /W
Electrical Characteristics (TC=25 unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250A 100 V
IDSS Zero Gate Voltage Drain Current VDS=100V,VGS=0V - 1 A
IGSS Gate-Body Leakage Current VGS=20V,VDS=0V - 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS,ID=250A 1 3 V
RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=20A - 24 28 m
RDS(ON) Drain-Source On-State Resistance VGS=4.5V, ID=10A - 28 30 m
gFS Forward Transconductance VDS=5V,ID=10A - 15 S
Ciss Input Capacitance VDS=25V,VGS=0V, F=1.0MHz - 2000 PF
Coss Output Capacitance - 300 PF
Crss Reverse Transfer Capacitance - 250 PF
td(on) Turn-on Delay Time VDD=50V,RL=5 VGS=10V,RGEN=3 - 7 nS
tr Turn-on Rise Time - 7 nS
td(off) Turn-Off Delay Time - 29 nS
tf Turn-Off Fall Time - 7 nS
Qg Total Gate Charge VDS=50V,ID=10A, VGS=10V - 39 nC
Qgs Gate-Source Charge - 8 nC
Qgd Gate-Drain Charge - 12 nC
VSD Diode Forward Voltage (Note 3) VGS=0V,IS=20A - 1.2 V
IS Diode Forward Current (Note 2) - 30 A
trr Reverse Recovery Time TJ = 25C, IF = 10A di/dt = 100A/s(Note3) - 32 nS
Qrr Reverse Recovery Charge - 53 nC
Package Information
Package Type TO-252
Quantity 2500 PCS

Applications

  • Battery protection
  • Load switch
  • Uninterruptible power supply
  • Other Switching applications

2410121503_Leiditech-SQD70140EL_C5128398.pdf

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