30V N Channel MOSFET Leiditech DMG3402LQ Featuring Low Gate Voltage Operation for Battery and Mobile
Key Attributes
Model Number:
DMG3402LQ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
38mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
233pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
3nC@10V
Mfr. Part #:
DMG3402LQ
Package:
SOT-23
Product Description
Product Overview
The DMG3402LQ is a 30V N-Channel Enhancement Mode MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications, including lithium battery protection, wireless impact, and mobile phone fast charging.
Product Attributes
- Brand: Leiditech
- Model: DMG3402LQ
- Package Type: SOT-23
- Technology: Advanced Trench Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current | TA=25 | 4.2 | A | ||
| ID@TA=70 | Continuous Drain Current | TA=70 | 2.6 | A | ||
| IDM | Pulsed Drain Current | 16 | A | |||
| PD | Power Dissipation | TA = 25 | 1 | W | ||
| RJA | Thermal Resistance, Junction to Ambient | 125 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | 32 | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V | - | - | 1.0 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= 20V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.2 | 1.5 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=4A | - | 29 | 38 | m |
| RDS(on) | Static Drain-Source on-Resistance | VGS=4.5V, ID=3A | - | 45 | 65 | m |
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1.0MHz | - | 233 | - | pF |
| Coss | Output Capacitance | - | 44 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 33 | - | pF | |
| Qg | Total Gate Charge | VDS=15V, ID=2A, VGS=10V | - | 3 | - | nC |
| Qgs | Gate-Source Charge | - | 0.5 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 0.8 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=15V, ID=4A, RGEN=3, VGS=10V | - | 4 | - | ns |
| tr | Turn-on Rise Time | - | 2.1 | - | ns | |
| td(off) | Turn-off Delay Time | - | 15 | - | ns | |
| tf | Turn-off Fall Time | - | 3.2 | - | ns | |
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 4 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 16 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=4A | - | - | 1.2 | V |
Package & Ordering Information
| Device Marking | Device Package | Reel Size | Tape width | Quantity |
|---|---|---|---|---|
| DMG3402LQ | SOT-23 | 180mm | 8 mm | 3000 units |
Dimensions (SOT-23)
| Symbol | Dimensions in Millimeters (MIN.) | Dimensions in Millimeters (MAX.) |
|---|---|---|
| A | 0.900 | 1.150 |
| A1 | 0.000 | 0.100 |
| A2 | 0.900 | 1.050 |
| b | 0.300 | 0.500 |
| c | 0.080 | 0.150 |
| D | 2.800 | 3.000 |
| E | 1.200 | 1.400 |
| E1 | 2.250 | 2.550 |
| e | 0.950 (TYP) | |
| e1 | 1.800 | 2.000 |
| L | 0.550 (REF) | |
| L1 | 0.300 | 0.500 |
| 0 | 8 |
2410121536_Leiditech-DMG3402LQ_C3647055.pdf
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