60V N Channel Enhancement Mode MOSFET Leiditech NVR5198NL with Low Gate Charge and Trench Technology
Key Attributes
Model Number:
NVR5198NL
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
100mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Input Capacitance(Ciss):
715pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
7nC@4.5V
Mfr. Part #:
NVR5198NL
Package:
SOT-23
Product Description
Product Overview
The NVR5198NL is a 60V N-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications, including load switches and uninterruptible power supplies.
Product Attributes
- Brand: Leiditech
- Model: NVR5198NL
- Package: SOT-23
- Technology: Advanced Trench Technology
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 3.0 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 1.8 | A | |||
| IDM | Pulsed Drain Current2 | 9.2 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient1 | 125 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 80 | /W | |||
| Electrical Characteristics (TJ=25, unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.054 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=2A | --- | 80 | 100 | m |
| VGS=4.5V , ID=1A | --- | 85 | 110 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -4.96 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=2A | --- | 13 | --- | S |
| Qg | Total Gate Charge (4.5V) | VDS=48V , VGS=4.5V , ID=2A | --- | 5 | 7.0 | nC |
| Qgs | Gate-Source Charge | --- | 1.68 | 2.4 | nC | |
| Qgd | Gate-Drain Charge | --- | 1.9 | 2.7 | nC | |
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3 , ID=2A | --- | 1.6 | 3.2 | ns |
| Tr | Rise Time | --- | 7.2 | 13 | ns | |
| Td(off) | Turn-Off Delay Time | --- | 25 | 50 | ns | |
| Tf | Fall Time | --- | 14.4 | 28.8 | ns | |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 511 | 715 | pF |
| Coss | Output Capacitance | --- | 38 | 53 | pF | |
| Crss | Reverse Transfer Capacitance | --- | 25 | 35 | pF | |
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | --- | 2.3 | A |
| ISM | Pulsed Source Current2,4 | --- | --- | 9.2 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=2A , dI/dt=100A/s , TJ=25 | --- | 9.7 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 5.8 | --- | nC | |
| Ordering Information | ||||||
| Device Marking | 6003 | |||||
| Package | SOT-23 | |||||
| Reel Size | 3000 | units | ||||
| Tape width | ||||||
| Package Mechanical Data-SOT-23 | ||||||
| Symbol | Dimensions in Millimeters | MIN. | MAX. | |||
| A | 0.900 | 1.150 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.900 | 1.050 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.080 | 0.150 | ||||
| D | 2.800 | 3.000 | ||||
| E | 1.200 | 1.400 | ||||
| E1 | 2.250 | 2.550 | ||||
| e | 0.950TYP | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.550REF | |||||
| L1 | 0.300 | 0.500 | ||||
| 0 | 8 | |||||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121618_Leiditech-NVR5198NL_C3647058.pdf
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