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quality Low leakage current diode Littelfuse IXYS VBE60-06A designed for high frequency and snubber circuits factory
quality Low leakage current diode Littelfuse IXYS VBE60-06A designed for high frequency and snubber circuits factory

Low leakage current diode Littelfuse IXYS VBE60-06A designed for high frequency and snubber circuits

Key Attributes
Model Number: VBE60-06A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
250A
Operating Junction Temperature Range:
-40℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.79V@60A
Current - Rectified:
60A
Voltage - DC Reverse(Vr):
600V
Mfr. Part #:
VBE60-06A
Package:
SOT-227B
Product Description

Product Overview

The VBE60-06A is a high-performance, low-loss, fast recovery diode with soft recovery characteristics. Designed for demanding applications, it offers improved thermal behavior, very low leakage current, and avalanche voltage rating for reliable operation. Its soft reverse recovery minimizes EMI/RFI, and low Irm reduces power dissipation and turn-on losses in commutating switches. This diode is ideal as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode, as well as in rectifiers for switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Part Number: VBE60-06A
  • Package: SOT-227B (minibloc)
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Backside: Isolated
  • Base Plate: Copper internally DCB isolated
  • Isolation Voltage: 3000 V~

Technical Specifications

SymbolDefinitionConditionsUnitmin.typ.max.
VRRMmax. repetitive reverse blocking voltageTVJ = 25CV600
IFDC forward currentTVJ = 100CA60
IFSMmax. forward surge currentt = 10 ms; (50 Hz), sine; TVJ = 45CA600
VFforward voltage dropIF = 60 A; TVJ = 25CV1.541.79
VF0threshold voltageTVJ = 25CV0.98
rFslope resistance for power loss calculation onlyTVJ = 25Cm8.2
IRreverse current, drain currentVR = 600 V; TVJ = 25CA150
Ptottotal power dissipationTC = 25CW110
RthJCthermal resistance junction to caseK/W1.151.54
RthCHthermal resistance case to heatsinkK/W0.1
trrreverse recovery timeIF = 30 A; -dIF/dt = 200 A/s; VR = 300 V; TVJ = 100Cns35
IRMmax. reverse recovery currentIF = 30 A; -dIF/dt = 200 A/s; VR = 300 V; TVJ = 100CA10
Qrreverse recovery chargeIF = 30 A; -dIF/dt = 200 A/s; VR = 300 V; TVJ = 100CnC100
CJjunction capacitanceVR = 400 V; f = 1 MHz; TVJ = 25CpF26
TVJvirtual junction temperatureC-40150
Tstgstorage temperatureC-40150
VISOLisolation voltaget = 1 second; RMS; I 1 mA; 50/60 HzV3000

2504101957_Littelfuse-IXYS-VBE60-06A_C17430995.pdf

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