Three phase rectifier module Littelfuse IXYS VUO80-08NO1 with improved temperature and power cycling

Key Attributes
Model Number: VUO80-08NO1
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
650A
Operating Junction Temperature Range:
-40℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.14V@30A
Current - Rectified:
80A
Voltage - DC Reverse(Vr):
800V
Mfr. Part #:
VUO80-08NO1
Package:
V1-A
Product Description

VUO80-08NO1 Rectifier Bridge Standard Rectifier Module

The VUO80-08NO1 is a standard rectifier module designed for main rectification and three-phase bridge configurations. It features a package with DCB ceramic, improved temperature and power cycling, planar passivated chips, and a very low forward voltage drop and leakage current. This module is ideal for applications such as DC power equipment supplies, input rectifiers for PWM inverters, battery DC power supplies, and field supplies for DC motors. It offers an industry-standard outline, RoHS compliance, and soldering pins for PCB mounting.

Product Attributes

  • Brand: IXYS
  • Package: V1-A-Pack
  • Certifications: RoHS compliant
  • Backside: Isolated
  • Base plate: DCB ceramic
  • Mounting: Soldering pins for PCB mounting

Technical Specifications

Part Number VRRM (max. repetitive reverse blocking voltage) I(AV) (Average forward current) IFSM (max. forward surge current) VF (Forward voltage drop) Ptot (Total power dissipation) RthJC (Thermal resistance junction to case) RthCH (Thermal resistance case to heatsink) Isolation Voltage Operating Temperature Storage Temperature Mounting Torque Height Weight
VUO80-08NO1 800 V 90 A 600 A (t=10 ms, sine) 1.48 V (typ.) 110 W (Tj=25C) 0.3 K/W 1.1 K/W 3600 V~ -40 to 150 C -40 to 125 C 1.5 Nm 17 mm 37 g

Additional Technical Data

V V m pF t=10 ms; (50 Hz), sine; Tj=150C t=8.3 ms; (60 Hz), sine; Tj=150C A V V m
Symbol Definition Conditions Unit typ. max.
VRSM non-repetitive reverse blocking voltage Tj=25C 800
IR reverse current VR = VRRM; Tj=25C A 125
VF0 threshold voltage Tj=150C0.81
rF slope resistance Tj=150C7.8
CJ junction capacitance VJ=400 V; Tj=25C; f=1 MHz18
I2t value for fusingkAs 1.30 1.26
DAV bridge output current rectangular; d=190
V isolation voltage 50/60 Hz, RMS; I 1 mA; t = 1 second3000 3600
Tstg storage temperature C -40 125
V0 threshold voltage on die level0.81
R0 slope resistance on die level6.6

2411272001_Littelfuse-IXYS-VUO80-08NO1_C7469139.pdf

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