Fast recovery diode Littelfuse IXYS DPG30I400HA with avalanche voltage rating and dissipation features
Key Attributes
Model Number:
DPG30I400HA
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
360A
Reverse Leakage Current (Ir):
1uA@400V
Reverse Recovery Time (trr):
45ns
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
400V
Pd - Power Dissipation:
160W
Voltage - Forward(Vf@If):
1.69V@60A
Current - Rectified:
30A
Mfr. Part #:
DPG30I400HA
Package:
TO-247-2
Product Description
Product Overview
The DPG30I400HA is a high-performance, low-loss, single fast recovery diode from IXYS, featuring HiPerFRED technology. It offers very short recovery times, very low leakage current, and improved thermal behavior with very low Irm-values and soft reverse recovery characteristics. This diode is avalanche voltage rated for reliable operation and its soft reverse recovery minimizes EMI/RFI. The low Irm reduces power dissipation within the diode and turn-on losses in the commutating switch. It is ideal for use as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and freewheeling diode. Applications include rectifiers in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
Product Attributes
- Brand: IXYS
- Technology: HiPerFRED
- Package: TO-247
- Certifications: RoHS compliant, Epoxy meets UL 94V-0
- Type: Single Diode, Fast Recovery Diode
Technical Specifications
| Symbol | Definition | Conditions | Unit | Typ. | Max. |
|---|---|---|---|---|---|
| VRRM | max. repetitive reverse blocking voltage | TVJ = 25C | V | 400 | |
| IF | average forward current | TC = 25C | A | 30 | |
| IFSM | max. forward surge current | t = 10 ms; (50 Hz), sine; TVJ = 45C | A | 360 | |
| Ptot | total power dissipation | TC = 25C | W | 160 | |
| VF | forward voltage drop | IF = 30 A; TVJ = 25C | V | 1.41 | 1.69 |
| VF0 | threshold voltage | IF = 30 A; TVJ = 175C | V | 0.76 | |
| R0 | slope resistance for power loss calculation only | IF = 30 A; TVJ = 175C | m | 10.7 | |
| RthJC | thermal resistance junction to case | K/W | 0.95 | 1.13 | |
| RthCH | thermal resistance case to heatsink | K/W | 0.25 | ||
| trr | reverse recovery time | IF = 30 A; -diF/dt = 200 A/s; VR = 270 V; TVJ = 125C | ns | 45 | |
| IRM | max. reverse recovery current | IF = 30 A; -diF/dt = 200 A/s; VR = 270 V; TVJ = 125C | A | 8.5 | |
| Qrr | reverse recovery charge | IF = 30 A; -diF/dt = 200 A/s; VR = 270 V; TVJ = 125C | C | 4 | |
| TVJ | virtual junction temperature | C | 175 | ||
| Tstg | storage temperature | C | -55 | 150 | |
| Weight | g | 6 |
Packaging Information
| Part Number | Delivery Mode | Quantity |
|---|---|---|
| DPG30I400HA | Tube | 30 |
Dimensions (TO-247)
| Sym | Description | Inches | Millimeter | ||
|---|---|---|---|---|---|
| min. | max. | min. | max. | ||
| A | 0.185 | 0.209 | 4.70 | 5.30 | |
| A1 | 0.087 | 0.102 | 2.21 | 2.59 | |
| A2 | 0.059 | 0.098 | 1.50 | 2.49 | |
| D | 0.819 | 0.845 | 20.79 | 21.45 | |
| E | 0.610 | 0.640 | 15.48 | 16.24 | |
| E2 | 0.170 | 0.216 | 4.31 | 5.48 | |
| e | 0.430 BSC | 10.92 BSC | |||
| L | 0.780 | 0.800 | 19.80 | 20.30 | |
| L1 | - | 0.177 | - | 4.49 | |
| P | 0.140 | 0.144 | 3.55 | 3.65 | |
| Q | 0.212 | 0.244 | 5.38 | 6.19 | |
| S | 0.242 BSC | 6.14 BSC | |||
| b | 0.039 | 0.055 | 0.99 | 1.40 | |
| b2 | 0.065 | 0.094 | 1.65 | 2.39 | |
| b4 | 0.102 | 0.135 | 2.59 | 3.43 | |
| c | 0.015 | 0.035 | 0.38 | 0.89 | |
| D1 | 0.515 | - | 13.07 | - | |
| D2 | 0.020 | 0.053 | 0.51 | 1.35 | |
| E1 | 0.530 | - | 13.45 | - | |
| P1 | - | 0.29 | - | 7.39 | |
2410121916_Littelfuse-IXYS-DPG30I400HA_C426682.pdf
Related Products
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
