semiconductor component Leiditech 2N7002HW featuring RoHS compliance and 1000V ESD protection for electronics
Key Attributes
Model Number:
2N7002HW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
50pF@25V
Pd - Power Dissipation:
225mW
Mfr. Part #:
2N7002HW
Package:
SC-70(SOT-323)
Product Description
Product Overview
The 2N7002HW is a semiconductor device designed for various electronic applications. It features RoHS compliance and Halogen Free material, ensuring environmental responsibility. The device offers ESD protection up to 1000V, enhancing its robustness in handling. With a maximum drain-source voltage of 60V and continuous drain current capabilities, it is suitable for switching and amplification tasks in industrial and consumer electronics.
Product Attributes
- Compliance: RoHS, Halogen Free
- ESD Protection: 1000V
- Device Marking: 6C
- Packaging: 3000/Tape&Reel
- Package Type: SC70(SOT-323)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| DrainGate Voltage (RGS = 1.0 M) | VDGR | 60 | Vdc | |||
| DrainSource Voltage | VDSS | 60 | Vdc | |||
| GateSource Voltage Continuous | VGS | 20 | Vdc | |||
| GateSource Voltage Pulsed (Note 1) | VGSM | 40 | Vdc | |||
| Drain Current | ID | 225 | mAdc | TC = 25C | ||
| Drain Current | ID | 75 | mAdc | TC = 100C | ||
| Total Device Dissipation, FR5 Board (Note 2) | PD | 1.8 | W | @ TA = 25C | ||
| Derate above 25C | 14.8 | mW/C | ||||
| Thermal Resistance, JunctiontoAmbient (Note 2) | RJA | 556 | C/W | |||
| Junction and Storage temperature | TJ,Tstg | -55 | 150 | C | ||
| DrainSource Breakdown Voltage (VGS = 0, ID = 10Adc) | VBRDSS | 60 | Vdc | |||
| Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) | IDSS | 1.0 | Adc | TJ = 25C | ||
| Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) | IDSS | 50 | Adc | TJ = 125C | ||
| GateBody Leakage Current, Forward (VGS = 20 Vdc) | IGSSF | 1.0 | Adc | |||
| GateBody Leakage Current, Reverse (VGS = - 20 Vdc) | IGSSR | -1.0 | Adc | |||
| Gate Threshold Voltage (VDS = VGS, ID = 250Adc) | VGS(th) | 1.0 | 2.5 | Vdc | ||
| OnState Drain Current (VDS 2.0 VDS(on), VGS = 10 Vdc) | ID(on) | 500 | mAdc | |||
| Static DrainSource OnState Voltage (VGS = 10 Vdc, ID = 500 mAdc) | VDS(on) | 1.4 | Vdc | |||
| Static DrainSource OnState Voltage (VGS = 5.0 Vdc, ID = 50 mAdc) | VDS(on) | 1.8 | Vdc | |||
| Static DrainSource OnState Resistance (VGS = 10 Vdc, ID = 500 mAdc) | RDS(on) | 3.75 | Ohms | TC = 25C | ||
| Static DrainSource OnState Resistance (VGS = 10 Vdc, ID = 500 mAdc) | RDS(on) | 7.5 | Ohms | TC = 125C | ||
| Static DrainSource OnState Resistance (VGS = 5.0 Vdc, ID = 50 mAdc) | RDS(on) | 13.5 | Ohms | TC = 25C | ||
| Static DrainSource OnState Resistance (VGS = 5.0 Vdc, ID = 50 mAdc) | RDS(on) | 13.5 | Ohms | TC = 125C | ||
| Forward Transconductance (VDS 2.0 VDS(on), ID = 200 mAdc) | gfs | 500 | mmhos | |||
| Input Capacitance | Ciss | 17 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | ||
| Output Capacitance | Cobo | 10 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | ||
| Reverse Transfer Capacitance | Crss | 2.5 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | ||
| Diode Forward OnVoltage (IS = 115 mAdc, VGS = 0 V) | VSD | 1.0 | Vdc | |||
| Source Current Continuous (Body Diode) | IS | 115 | mAdc | |||
| Source Current Pulsed | ISM | 500 | mAdc | |||
| TurnOn Delay Time | td(on) | 7 | ns | VDD = 25 Vdc , ID =500 mAdc, RG = 25,RL = 50 ,Vgen = 10 V | ||
| TurnOff Delay Time | td(off) | 11 | ns | VDD = 25 Vdc , ID =500 mAdc, RG = 25,RL = 50 ,Vgen = 10 V |
Notes:
- 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
- 2. FR5 = 1.00.750.062 in.
- 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Outline and Dimensions
| DIM | MILLIMETERS | INCHES | ||||
|---|---|---|---|---|---|---|
| MIN | NOM | MAX | MIN | NOM | MAX | |
| A | 0.80 | 0.90 | 1.00 | 0.032 | 0.035 | 0.039 |
| A1 | 0.00 | 0.05 | 0.10 | 0.000 | 0.002 | 0.004 |
| b | 0.30 | 0.35 | 0.40 | 0.012 | 0.014 | 0.016 |
| c | 0.071 | 0.083 | 0.095 | 0.003 | 0.003 | 0.004 |
| D | 1.80 | 1.90 | 2.00 | 0.071 | 0.075 | 0.079 |
| E | 1.15 | 1.24 | 1.35 | 0.045 | 0.049 | 0.053 |
| e | 0.65REF | 0.026REF | ||||
| e1 | 1.20 | 1.30 | 1.40 | 0.047 | 0.051 | 0.055 |
| L | 0.20 | 0.38 | 0.56 | 0.008 | 0.015 | 0.022 |
| HE | 2.00 | 2.10 | 2.40 | 0.079 | 0.083 | 0.095 |
Notes:
- 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
- 2. CONTROLLING DIMENSION: MILLIMETERS.
- 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
- 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
Contact Information
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
Website: www.leiditech.com
2410121549_Leiditech-2N7002HW_C4555455.pdf
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