Power MOSFET Leiditech DMTH10H025LK3Q N Channel Enhancement Mode with Low RDS ON and 100V VDS Rating

Key Attributes
Model Number: DMTH10H025LK3Q
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
28mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
250pF
Number:
1 N-channel
Pd - Power Dissipation:
85W
Input Capacitance(Ciss):
2nF
Gate Charge(Qg):
39nC
Mfr. Part #:
DMTH10H025LK3Q
Package:
TO-252
Product Description

Product Overview

The DMTH10H025LK3Q is an N-Channel Enhancement Mode MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is highly suitable for battery protection and other switching applications. Key features include a VDS of 100V, an ID of 50A, and an RDS(ON) of less than 28m at VGS=10V. Applications include battery protection, load switching, and uninterruptible power supplies.

Product Attributes

  • Brand: Leiditech
  • Product ID: DMTH10H025LK3Q
  • Package: TO-252
  • Technology: Advanced Trench Technology
  • Channel Type: N-Channel
  • Mode: Enhancement Mode
  • Revision: 2.0
  • Date: 12.01.2019

Technical Specifications

Symbol Parameter Condition Limit Unit
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous (TC=25 unless otherwise noted) 50 A
ID (100) Drain Current-Continuous (TC=100) 21 A
IDM Pulsed Drain Current 70 A
PD Maximum Power Dissipation 85 W
Derating factor 0.57 W/
EAS Single pulse avalanche energy (Note 5) 256 mJ
TJ,TSTG Operating Junction and Storage Temperature Range -55 To 175
RJC Thermal Resistance, Junction-to-Case (Note 2) 1.8 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250A 100 V
IDSS Zero Gate Voltage Drain Current VDS=100V,VGS=0V - 1 A
IGSS Gate-Body Leakage Current VGS=20V,VDS=0V - 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS,ID=250A 1, 3 V
RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=20A - 24, 28 m
VGS=4.5V, ID=10A - 28, 30 m
gFS Forward Transconductance VDS=5V,ID=10A - 15 S
Clss Input Capacitance VDS=25V,VGS=0V, F=1.0MHz - 2000 PF
Coss Output Capacitance - 300 PF
Crss Reverse Transfer Capacitance - 250 PF
td(on) Turn-on Delay Time VDD=50V,RL=5 - 7 nS
VGS=10V,RGEN=3 - 7 nS
tr Turn-on Rise Time - 7 nS
td(off) Turn-Off Delay Time - 29 nS
tf Turn-Off Fall Time - 7 nS
Qg Total Gate Charge VDS=50V,ID=10A, VGS=10V - 39 nC
Qgs Gate-Source Charge - 8 nC
Qgd Gate-Drain Charge - 12 nC
VSD Diode Forward Voltage VGS=0V,IS=20A (Note 3) - - 1.2 V
IS Diode Forward Current (Note 2) - - 30 A
trr Reverse Recovery Time TJ = 25C, IF = 10A, di/dt = 100A/s (Note 3) - 32 nS
Qrr Reverse Recovery Charge - 53 nC

Packaging & Ordering Information

Product ID Pack Marking Qty(PCS) Package
DMTH10H025LK3Q DMTH10H025LK3Q 2500 TO-252

Package Mechanical Data (TO-252-3L)

Ref Min (mm) Typ (mm) Max (mm) Min (Inches) Typ (Inches) Max (Inches)
A 2.10 - - 0.083 - -
A2 - 0.66 - - 0.026 -
B 0.40 - 0.60 0.016 - 0.024
C 2.50 - - 0.098 - -
D 0.10 - - 0.004 - -
E 0.86 - - 0.034 - -
G 0.60 - - 0.024 - -
H - - - - - -
L 6.40 9.50 10.70 0.252 0.374 0.421
V1 5.90 - 6.30 0.232 - 0.248
V2 4.47 - 4.67 0.176 - 0.184
L2 - - - - - -
B2 5.18 - 5.48 0.202 - 0.216
C2 0.44 - 0.58 0.017 - 0.023
E1 - 5.30 (REF) - - 0.209 (REF) -
D1 4.63 - - 0.182 - -

Reel Specification (TO-252)

Ref Min (mm) Typ (mm) Max (mm) Min (Inches) Typ (Inches) Max (Inches)
W 15.90 - 16.10 0.626 - 0.634
E 1.65 - 1.85 0.065 - 0.073
F 7.40 - 7.60 0.291 - 0.299
D0 1.40 - 1.60 0.055 - 0.063
D1 - - - - - -
P0 1.40 - 1.60 0.055 - 0.063
P1 7.90 - 8.10 0.311 - 0.319
P2 10.45 - 10.60 0.411 - 0.417
A0 - - - - - -
B0 - - - - - -
K0 - - - - - -
T - - - - - -
t1 - - - - - -

Contact Information

Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
Website: www.leiditech.com


2410121503_Leiditech-DMTH10H025LK3Q_C5128402.pdf

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