High Voltage Diode LGE ES5K with Metal Silicon Junction and 800 Volt Maximum DC Blocking Voltage Rating

Key Attributes
Model Number: ES5K
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
5uA@800V
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
800V
Voltage - Forward(Vf@If):
1.68V@5A
Current - Rectified:
5A
Mfr. Part #:
ES5K
Package:
SMC
Product Description

Product Overview

The ES5A thru ES5M series are Metal-Silicon Junction diodes designed for surface mount applications. They feature a guard ring for overvoltage protection, high forward surge current capability, and a super low forward voltage. These diodes are capable of high temperature soldering up to 260 for 10 seconds at terminals.

Product Attributes

  • Brand: lgesemi (implied from URL)
  • Material: Metal-Silicon Junction, Transfer molded plastic (Epoxy)
  • Flame Retardant: UL94V-O
  • Certifications: UL94V-O, MIL-STD-750 method 2026
  • Polarity: Color band denotes cathode end
  • Weight: 0.007 ounce, 0.25 grams

Technical Specifications

SymbolES5AES5BES5DES5GES5JES5KES5MUnit
Maximum Repetitive Peak Reverse Voltage (VRRM)501002004006008001000Volts
Maximum RMS Voltage (VRMS)3570140280420560720Volts
Maximum DC Blocking Voltage (VDC)501002004006008001000Volts
Maximum Average Forward Rectified Current (I(AV))5.0Amp
Peak Forward Surge Current (IFSM) 8.3ms single half sine-wave150Amps
Maximum Instantaneous Forward Voltage at 5.0A (VF)0.951.251.68Volts
Maximum DC Reverse Current at rated DC Blocking Voltage (IR) TA = 255u A
Maximum DC Reverse Current at rated DC Blocking Voltage (IR) TA = 100100
Maximum reverse recovery time (Trr)35ns
Operating Temperature Range (TJ) -55 to +150
Storage Temperature Range (TSTG)-55 to +150

2409302333_LGE-ES5K_C5124922.pdf

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