30V N Channel Enhancement Mode MOSFET Leiditech IRLML6346 Ideal for Battery Protection Applications
Key Attributes
Model Number:
IRLML6346
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
38mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
233pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
3nC@10V
Mfr. Part #:
IRLML6346
Package:
SOT-23
Product Description
Product Overview
The IRLML6346 is a 30V N-Channel Enhancement Mode MOSFET designed for efficient switching applications. It leverages advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This MOSFET is particularly suitable for battery protection in lithium-ion devices and other general switching applications, including wireless impact and mobile phone fast charging.Product Attributes
- Brand: Leiditech
- Model: IRLML6346
- Technology: Advanced Trench Technology
- Mode: N-Channel Enhancement Mode
- Package: SOT-23
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current | 4.2 | A | |||
| ID@TA=70 | Continuous Drain Current | 2.6 | A | |||
| IDM | Pulsed Drain Current | 16 | A | |||
| PD | Power Dissipation | TA = 25 | 1 | W | ||
| RJA | Thermal Resistance, Junction to Ambient | 125 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics (TJ=25, unless otherwise noted) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | 32 | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V | - | - | 1.0 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= 20V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.2 | 1.5 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=4A | - | 29 | 38 | m |
| RDS(on) | Static Drain-Source on-Resistance | VGS=4.5V, ID=3A | - | 45 | 65 | m |
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1.0MHz | - | 233 | - | pF |
| Coss | Output Capacitance | - | 44 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 33 | - | pF | |
| Qg | Total Gate Charge | VDS=15V, ID=2A, VGS=10V | - | 3 | - | nC |
| Qgs | Gate-Source Charge | - | 0.5 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 0.8 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=15V, ID=4A, RGEN=3, VGS=10V | - | 4 | - | ns |
| tr | Turn-on Rise Time | - | 2.1 | - | ns | |
| td(off) | Turn-off Delay Time | - | 15 | - | ns | |
| tf | Turn-off Fall Time | - | 3.2 | - | ns | |
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 4 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 16 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=4A | - | - | 1.2 | V |
| Package Marking and Ordering Information | ||||||
| Device Marking | 3404B | |||||
| Device | IRLML6346 | |||||
| Device Package | SOT-23 | |||||
| Reel Size | 180mm | |||||
| Tape width | 8 mm | |||||
| Quantity | 3000 units | |||||
| Dimensions (SOT-23) | ||||||
| Symbol | Dimensions in Millimeters | MIN. | MAX. | |||
| A | 0.900 | 1.150 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.900 | 1.050 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.080 | 0.150 | ||||
| D | 2.800 | 3.000 | ||||
| E | 1.200 | 1.400 | ||||
| E1 | 2.250 | 2.550 | ||||
| e | 0.950TYP | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.550REF | |||||
| L1 | 0.300 | 0.500 | ||||
| 0 | 8 | |||||
2410121536_Leiditech-IRLML6346_C3647054.pdf
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