86--136 6733 2386
quality Glass passivated junction rectifier LGE FRABS210 with 1000 volt 2 ampere rating and molded plastic body factory
quality Glass passivated junction rectifier LGE FRABS210 with 1000 volt 2 ampere rating and molded plastic body factory

Glass passivated junction rectifier LGE FRABS210 with 1000 volt 2 ampere rating and molded plastic body

Key Attributes
Model Number: FRABS210
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
60A
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.3V@1A
Current - Rectified:
2A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
FRABS210
Package:
ABS
Product Description

Product Overview

The FRABS210 is a glass passivated junction rectifier designed for printed circuit board applications. It offers reliable, low-cost construction with high temperature soldering capabilities and a small, easy-to-install package. Key advantages include high surge current capability and pure tin plated, lead-free terminals suitable for soldering per MIL-STD-202. Ideal for applications requiring a 1000 Volt, 2.0 Ampere rating.

Product Attributes

  • Brand: LG SEMI (implied by website and email)
  • Material: Molded plastic body, Glass passivated junction, Pure tin plated terminal
  • Certifications: RoHS compliant (implied by Lead free)
  • Origin: Not specified
  • Color: Not specified

Technical Specifications

CharacteristicSymbolValueUnitNotes
Maximum Recurrent Peak Reverse VoltageVRRM1000V
Maximum RMS VoltageVRMS700V
Maximum DC Blocking VoltageVDC1000V
Maximum Average Forward Rectified Current @TA=40I(AV)2.0A
Peak Forward Surge Current 8.3ms Single Half Sine-WaveIFSM50AJEDEC Method
Maximum Forward Voltage at 1.0A DCVF1.3V
Maximum DC Reverse Current @TJ=25 at Rated DC Blocking VoltageIR10A
Maximum DC Reverse Current @TJ=125 at Rated DC Blocking VoltageIR500A
I2t Rating for Fusing (t<8.3ms)I2t14.94A2s
Typical Junction capacitance Per ElementCJ25pFMeasured at 1.0MHz and applied reverse voltage of 4.0V DC. Mounted on P.C.B with 0.5*0.5"(13*13mm) copper pads.
Typical Thermal Resistance (Junction to Ambient)RJA40/WMounted on P.C.B.
Operating Temperature RangeTJ-55 to +150
Storage Temperature RangeTSTG-55 to +150
Maximum Reverse Recovery TimeTrr500nsReverse Recovery Test Conditions:IF=0.5A,IR=1.0A,IRR=0.25A.

2410121753_LGE-FRABS210_C2903794.pdf

Related Products
quality High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers factory
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
quality Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic factory
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
quality digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free factory
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.